Infineon N-Channel IGBT, 100 A 600 V, 3-Pin TO-247 Through Hole IKW50N60H3FKSA1

Infineon IKW50N60H3FKSA1 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for power semiconductor applications requiring efficient switching and high current handling capabilities.

This device is housed in a 3-Pin TO-247 through-hole package, facilitating straightforward mounting on printed circuit boards. It supports a maximum continuous collector current of 100 A and a maximum collector-emitter voltage of 600 V, making it suitable for demanding power electronics and industrial automation applications.

Featuring Infineon's TrenchStop™ technology, the IKW50N60H3FKSA1 offers low saturation voltage and minimal switching losses, which contribute to reduced heat dissipation and increased overall system efficiency. The fast switching speed of 273 ns further enables high-frequency operation.

This IGBT device operates reliably in a wide temperature range from -40°C to 175°C. It includes an integrated high-speed, fast recovery anti-parallel diode that enhances switching performance and reliability. Compliance with RoHS and JEDEC standards ensures product quality and environmental safety.

Ideal for industrial machinery, power supplies, motor drives, renewable energy systems, and HVAC controls, this Infineon IKW50N60H3FKSA1 transistor supports robust and efficient power management in diverse engineering applications.

Maximum continuous collector current of 100 A. Maximum collector-emitter voltage of 600 V. Maximum power dissipation of 333 W for effective thermal management. Standard TO-247 package with through-hole mounting. Switching speed of 273 ns for high-frequency operation.

Operating temperature range from -40°C to 175°C. TrenchStop™ technology for improved efficiency and low losses. RoHS and JEDEC standards compliant. Explore the Electronics & Electricals category at EnvMart for more semiconductor devices and power management solutions.