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Infineon N-Channel Insulated Gate Bipolar Transistor (IGBT) 45A 600V TO-247 Through Hole IKW30N60TFKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IKW30N60TFKSA1 |
| Mount Type | Through Hole |
| Series | TrenchStop |
| Energy Rating | 2.1mJ |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | JEDEC, Pb-Free, RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 45A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.05V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 187W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Key Features
- Features a maximum continuous collector current of 45 amperes.
- Maximum collector-emitter voltage rating of 600 volts ensures high power handling.
- Packaged in robust TO-247 format for heat dissipation and durability.
- Designed with TrenchStop technology for low voltage saturation and reduced switching losses.
- Operates efficiently at a maximum junction temperature of 175°C.
- Includes a fast recovery anti-parallel diode to improve switching performance.
- Rated maximum power dissipation of 187 watts to support demanding applications.
- Fits standard 3-pin configuration for ease of integration in electronic circuits.
Product Description
The Infineon IKW30N60TFKSA1 is a N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-performance power switching applications. It features a maximum continuous collector current (Ic) of 45 A and a maximum collector-emitter voltage (Vceo) of 600 V, making it suitable for demanding industrial and commercial electronic circuits.
Housed within a TO-247 through-hole package, this device offers excellent thermal management and mechanical stability. Utilizing Infineon's proprietary TrenchStop technology, the transistor ensures very low collector-emitter saturation voltage (VceSAT) and low turn-off losses, improving overall efficiency in power inverters and converters.
This IGBT supports operation up to a junction temperature of 175°C, which extends reliability under high-stress conditions. It includes an integrated fast recovery anti-parallel diode, enhancing switching speed and reducing electromagnetic interference (EMI) during device transitions.
The device is compliant with JEDEC standards and is RoHS and Pb-Free certified, suitable for modern environmental requirements. Its channel type is N, and it features a 3-pin configuration with a maximum gate-emitter voltage of 20 V. Operating temperature ranges from -40°C to 175°C.
Maximum continuous collector current: 45 A. Maximum collector-emitter voltage: 600 V. Maximum power dissipation: 187 W. TO-247 through-hole package for durability and thermal efficiency. TrenchStop series technology for reduced losses.
Maximum operating temperature up to 175°C. Fast recovery anti-parallel diode integrated. Compliance with JEDEC, RoHS, and Pb-Free standards. Ideal for power electronics, motor control, and inverter applications.
This transistor is widely used in industrial electronics, motor drives, renewable energy inverters, HVAC systems, and manufacturing automation where efficient power control is paramount.
Explore additional Infineon semiconductor products and IGBTs available at EnvMart’s comprehensive electronics supply catalog for reliable and innovative power semiconductor solutions.
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Frequently Asked Questions
The maximum continuous collector current for this IGBT is 45 A.
The maximum collector-emitter voltage rating is 600 V.
This IGBT is packaged in a TO-247 through-hole format.
The maximum power dissipation is rated at 187 W.
It can operate within a temperature range from -40°C to 175°C.
It utilizes Infineon's proprietary TrenchStop technology for improved efficiency.
Yes, it includes a fast recovery anti-parallel diode to enhance switching performance.
The maximum gate-emitter voltage is 20 V.
This IGBT complies with JEDEC, RoHS, and is Pb-Free certified.
The minimum operating temperature is -40°C.
This IGBT has a 3-pin configuration.
It is suitable for power electronics, motor control, and inverter applications.
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