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Infineon N-Channel IGBT, 8 A Collector Current, 1200 V Collector-Emitter Voltage, TO-247 Package, Through IKW08T120FKSA1

Category IGBT Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model IKW08T120FKSA1
Mount Type Through Hole
Series TrenchStop
Energy Rating 2.28mJ
Maximum Operating Temperature 150°C
Package Type TO-247
Minimum Operating Temperature -40°C
Standards/Approvals Pb-free lead plating, RoHS, JEDEC1
Pin Count 3
Maximum Continuous Collector Current Ic 8A
Maximum Collector Emitter Voltage Vceo 1200V
Maximum Collector Emitter Saturation Voltage VceSAT 2.2V
Channel Type N
Maximum Power Dissipation Pd 70W
Maximum Gate Emitter Voltage VGEO 20 V

Key Features

  • Maximum continuous collector current of 8 amperes for reliable power handling.
  • Collector-emitter voltage rating up to 1200 volts for high voltage operation.
  • TO-247 package with through-hole mount for ease of integration in power electronics.
  • TrenchStop technology ensuring low collector-emitter saturation voltage of 2.2 V.
  • Wide operating temperature range from -40°C up to 150°C for robust industrial performance.
  • Maximum power dissipation of 70 watts supports substantial heat loads.
  • Fast switching speed of 20kHz suitable for inverter and switching power supplies.
  • Rated gate-emitter voltage up to 20 volts for safe gate control voltages.

Product Description

Infineon IKW08T120FKSA1 is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for industrial power switching applications requiring high voltage and moderate current ratings. This component features a maximum continuous collector current of 8 A and a collector-emitter voltage rating of 1200 V, packaged in a TO-247 through-hole mount style that facilitates straightforward assembly into power electronics circuits.

Equipped with Infineon’s TrenchStop technology, this IGBT provides very low collector-emitter saturation voltage (VceSAT) of 2.2 V, reducing conduction losses and improving overall efficiency. The device offers a maximum power dissipation of 70 W and supports switching speeds up to 20 kHz, making it suitable for inverter circuits, motor drives, and switched-mode power supplies.

The IKW08T120FKSA1 operates reliably across a temperature range from -40°C to 150°C, ensuring durable performance in harsh industrial environments. It supports a gate-emitter voltage up to 20 V and includes Pb-free lead plating compliant with RoHS and JEDEC1 standards, supporting environmentally friendly manufacturing requirements.

This three-pin device in a TO-247 package allows for secure mounting and effective heat dissipation, essential for applications requiring robust power handling and long-term reliability.

Maximum continuous collector current: 8 A. Maximum collector-emitter voltage: 1200 V. Maximum power dissipation: 70 W. Package type: TO-247, through-hole mount. Channel type: N-Channel. Pin count: 3. Maximum gate-emitter voltage: 20 V.

Operating temperature range: -40°C to 150°C. Maximum collector-emitter saturation voltage: 2.2 V. Compliance: Pb-free lead plating, RoHS, JEDEC1. Ideal for industrial, laboratory, automotive, motor control, inverter, and power management applications requiring durable and efficient power semiconductors.

Explore more Infineon semiconductor devices and power electronics components in EnvMart’s extensive catalog for industrial and commercial uses.

Infineon N-Channel IGBT, 8 A Collector Current, 1200 V Collector-Emitter Voltage, TO-247 Package, Through IKW08T120FKSA1
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Frequently Asked Questions

The maximum continuous collector current for this IGBT is 8 A.

This model has a collector-emitter voltage rating of up to 1200 V.

It is packaged in a TO-247 through-hole mount style, which facilitates straightforward assembly into power electronics circuits.

The maximum power dissipation for this IGBT is 70 W, supporting substantial heat loads.

This model operates reliably across a temperature range from -40°C to 150°C.

The maximum gate-emitter voltage for this IGBT is rated at 20 V.

It features Infineon’s TrenchStop technology, which provides a low collector-emitter saturation voltage of 2.2 V, reducing conduction losses.

This IGBT supports a fast switching speed of up to 20 kHz, making it suitable for inverter circuits and switching power supplies.

It includes Pb-free lead plating and complies with RoHS and JEDEC1 standards.

This model has a pin count of 3.

It is ideal for industrial, laboratory, automotive, motor control, inverter, and power management applications.

The country of origin for this IGBT is India.

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