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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IKW08T120FKSA1 |
| Mount Type | Through Hole |
| Series | TrenchStop |
| Energy Rating | 2.28mJ |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | Pb-free lead plating, RoHS, JEDEC1 |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 8A |
| Maximum Collector Emitter Voltage Vceo | 1200V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.2V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 70W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Infineon IKW08T120FKSA1 is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for industrial power switching applications requiring high voltage and moderate current ratings. This component features a maximum continuous collector current of 8 A and a collector-emitter voltage rating of 1200 V, packaged in a TO-247 through-hole mount style that facilitates straightforward assembly into power electronics circuits.
Equipped with Infineon’s TrenchStop technology, this IGBT provides very low collector-emitter saturation voltage (VceSAT) of 2.2 V, reducing conduction losses and improving overall efficiency. The device offers a maximum power dissipation of 70 W and supports switching speeds up to 20 kHz, making it suitable for inverter circuits, motor drives, and switched-mode power supplies.
The IKW08T120FKSA1 operates reliably across a temperature range from -40°C to 150°C, ensuring durable performance in harsh industrial environments. It supports a gate-emitter voltage up to 20 V and includes Pb-free lead plating compliant with RoHS and JEDEC1 standards, supporting environmentally friendly manufacturing requirements.
This three-pin device in a TO-247 package allows for secure mounting and effective heat dissipation, essential for applications requiring robust power handling and long-term reliability.
Maximum continuous collector current: 8 A. Maximum collector-emitter voltage: 1200 V. Maximum power dissipation: 70 W. Package type: TO-247, through-hole mount. Channel type: N-Channel. Pin count: 3. Maximum gate-emitter voltage: 20 V.
Operating temperature range: -40°C to 150°C. Maximum collector-emitter saturation voltage: 2.2 V. Compliance: Pb-free lead plating, RoHS, JEDEC1. Ideal for industrial, laboratory, automotive, motor control, inverter, and power management applications requiring durable and efficient power semiconductors.
Explore more Infineon semiconductor devices and power electronics components in EnvMart’s extensive catalog for industrial and commercial uses.
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