Infineon OptiMOS 3 N-Channel MOSFET, 80 A, 100 V Enhancement Mode, 3-Pin TO-262 IPI086N10N3GXKSA1

Infineon IPI086N10N3GXKSA1 is an advanced OptiMOS 3 series N-Channel MOSFET designed for efficient power management applications across industrial, automotive, and electronics sectors. It features a continuous drain current rating of 80 A and a maximum drain-source voltage of 100 V, suitable for demanding power switching tasks.

The device utilizes an enhancement mode N-channel design that optimizes electrical performance and reduces conduction losses through a low RDS(on) of 15.4 milliohms. This low on-resistance significantly improves energy efficiency and minimizes thermal dissipation.

Rated for a maximum power dissipation of 125 W, this MOSFET reliably operates within a wide temperature range from -55°C up to 175°C, ensuring stable performance in harsh environments. The typical gate charge of 42 nC and gate source voltage tolerance between -20 and +20 V facilitate precise and effective switching control, which is crucial for synchronous rectification and converter circuits.

The device’s 3-pin TO-262 through hole package offers robust mechanical stability and easy mounting on printed circuit boards, promoting reliable integration and thermal management. Its compact dimensions (11.177mm height, 10.36mm length, 4.57mm width) complement tight-space designs.

N-channel design optimizes electrical performance for various applications. Low RDS(on) value of 15.4 milliohms reduces power losses significantly. Maximum power dissipation of 125 W supports intensive usage scenarios. Through hole mount type allows straightforward integration into circuit boards.

Operates reliably in temperatures ranging from -55°C to 175°C. Typical gate charge of 42 nC enhances switching efficiency in power electronics. High gate source voltage tolerance of -20 to +20 V improves device robustness.

Compact 3-pin TO-262 package design facilitates thermal management and space savings. Suitable for synchronous rectification and high-frequency switching in industrial and automotive systems.

This MOSFET is ideal for high-frequency switching power supplies, synchronous rectification in converter circuits, and industrial automation requiring efficient power control. It is also applicable in automotive electronics where consistent performance under thermal stress is critical.

Infineon’s OptiMOS 3 family brings enhanced gate threshold, low losses, and superior power density. This product advances energy efficiency and reliability in demanding power management environments.

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