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onsemi Automotive Power N-Channel Enhancement MOSFET, 200 A, 40 V, 110 W, 8-Pin LFPAK NVMJS1D5N04CL
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.15mm |
| Length | 5mm |
| Model | NVMJS1D5N04CL |
| Width | 4.9mm |
| Mount Type | Surface |
| Series | NVMJS1D5N04CL |
| Maximum Operating Temperature | 175°C |
| Package Type | LFPAK |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 200A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 2.2mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 110W |
| Typical Gate Charge Qg @ Vgs | 70nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- The device features a low on-resistance of 2.2 milliohms to minimize conduction losses.
- It supports a maximum power dissipation of 110 W and operates up to 175°C.
- The LFPAK8 package provides industry-standard dimensions with compact 5 mm length and 4.9 mm width.
- Typical gate charge is low at 70 nC, reducing driver losses and improving switching efficiency.
- The MOSFET supports AEC-Q101 automotive standards and includes a wettable flank option for enhanced optical inspection.
- Maximum gate-to-source voltage rating is ±20 V for reliable control.
- Forward voltage drop is 1.2 V ensuring efficient operation in high current applications.
- Operating temperature range extends from -55°C to 175°C for harsh environment suitability.
Product Description
onsemi NVMJS1D5N04CL is an automotive power N-Channel enhancement MOSFET rated for 200 A continuous drain current and 40 V maximum drain-to-source voltage. Packaged in a compact 8-pin LFPAK with dimensions approximately 5 mm length, 4.9 mm width, and 1.15 mm height, this surface-mount device offers high efficiency and thermal performance for demanding applications.
The device's low on-resistance of 2.2 milliohms minimizes conduction losses, while the typical gate charge of 70 nC reduces driver power dissipation, enabling highly efficient switching in power circuits. It supports maximum power dissipation of 110 W and can operate reliably within a broad temperature range from -55°C to 175°C, meeting automotive-grade AEC-Q101 standards.
The NVMJS1D5N04CL features an enhancement mode channel design with a maximum gate-to-source voltage of ±20 V and a forward voltage drop of 1.2 V, ensuring robust performance in power electronics. The 8-pin LFPAK package includes a wettable flank option, facilitating enhanced optical inspection and PPAP compliance for automotive manufacturing quality requirements.
This MOSFET is intended for applications in automotive electronics, industrial power management, and other high current switching scenarios demanding compact size, high reliability, and superior thermal management.
Low RDS(on) for minimized conduction losses. Low gate charge for reduced switching losses. AEC-Q101 qualified for automotive reliability. Compact LFPAK8 package for space-saving designs. Wide operating temperature range: -55°C to 175°C.
PPAP capable and Pb-free.
onsemi products provide a trusted solution for engineers designing advanced mobility, industrial, and commercial power applications. Explore the complete range of semiconductors and power MOSFETs at EnvMart for optimized electronic system integration.
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Frequently Asked Questions
The maximum continuous drain current for this model is 200 A.
This MOSFET has a maximum drain-to-source voltage rating of 40 V.
The device features a low on-resistance of 2.2 milliohms, which helps minimize conduction losses.
The typical gate charge is 70 nC, which reduces driver losses and enhances switching efficiency.
The MOSFET is packaged in an 8-pin LFPAK, which provides compact dimensions.
This model supports a maximum power dissipation of 110 W.
It complies with the AEC-Q101 automotive standard for reliability.
The maximum gate-to-source voltage rating is ±20 V, ensuring reliable control.
The forward voltage drop is 1.2 V, which ensures efficient operation in high current applications.
The dimensions of this model are approximately 5 mm in length, 4.9 mm in width, and 1.15 mm in height.
This MOSFET is designed for surface mounting.
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