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onsemi N-Channel MOSFET 313 A, 40 V Enhancement Mode, 8-Pin DFN Package NTMFSC0D9N04CL
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 950μm |
| Length | 5.9mm |
| Model | NTMFSC0D9N04CL |
| Width | 5mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | DFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 313A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 850μΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 167W |
| Typical Gate Charge Qg @ Vgs | 143nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Constructed using ON Semiconductor’s Power Trench® process for enhanced performance.
- Offers ultra-low drain-source resistance of 850 micro-ohms for reduced conduction losses.
- Designed with improved thermal dissipation through top and bottom sides of the package.
- Maximum power dissipation of 167 W supports high current operation.
- Typical gate charge is 143 nC ensuring efficient switching.
- Maximum operating temperature up to 150°C enables reliable use in demanding applications.
- Features a low forward voltage of 1.2 V to improve efficiency in power circuits.
- Ideal for synchronous rectification in AC-DC and DC-DC power supplies.
Product Description
onsemi NTMFSC0D9N04CL is a high-performance N-Channel MOSFET designed with advanced Power Trench® process technology and encapsulated in a compact 8-pin DFN package. It supports a maximum continuous drain current of 313 A and a drain-source voltage of 40 V, making it suitable for high-current switching applications.
The device features ultra-low Rds(on) of 850 micro-ohms, which effectively reduces conduction loss and improves overall energy efficiency. Its dual-sided thermal dissipation through the top and bottom of the package enhances heat management, critical for industrial environments.
This MOSFET is rated for maximum power dissipation of 167 W and operates reliably in temperatures ranging from -55°C to 150°C. The typical gate charge of 143 nC allows for fast and efficient switching, vital in power supply designs. The forward voltage of 1.2 V further optimizes conduction efficiency.
Applications include synchronous rectification in AC-DC and DC-DC power supplies, motor switching, and load switching in industrial, commercial, and HVAC systems. Its surface-mount DFN package measuring 5.9 mm by 5 mm with a height of 950 μm supports compact PCB layouts in manufacturing.
Constructed using advanced Power Trench® silicon technology for superior switching characteristics. Extremely low Rds(on) minimizes conduction losses and heat generation during operation. Dual Cool™ package design offers enhanced thermal dissipation through top and bottom surfaces.
Supports a wide operating temperature range from -55°C to 150°C for industrial robustness. Typical gate charge of 143 nC enables efficient fast switching performance. Compact 8-pin DFN surface mount package enables space-saving PCB designs.
Applications include synchronous rectifiers, motor control, load switching, and power conversion. Explore more high-quality MOSFETs and semiconductor components from onsemi and related high-performance products on EnvMart for industrial and electronics manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current of this model is 313 A.
It supports a maximum drain-source voltage of 40 V.
The typical gate charge is 143 nC.
It has an ultra-low drain-source resistance of 850 micro-ohms.
The maximum power dissipation is rated at 167 W.
It operates reliably within a temperature range of -55°C to 150°C.
This model comes in an 8-pin DFN package.
The dimensions are 5.9 mm in length, 5 mm in width, and 950 μm in height.
It is suitable for synchronous rectification in AC-DC and DC-DC power supplies, motor switching, and load switching in industrial and commercial systems.
It features an N-channel configuration with enhancement mode.
The forward voltage is 1.2 V, which helps improve efficiency in power circuits.
The maximum gate-source voltage is 20 V.
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