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onsemi Industrial Power N-Channel MOSFET 27 A, 60 V, Enhancement Mode, 4-Pin LFPAK Package NTMYS021N06CLTWG
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.15mm |
| Length | 5mm |
| Model | NTMYS021N06CLTWG |
| Width | 4.25mm |
| Mount Type | Surface |
| Series | NTMYS021N06CL |
| Maximum Operating Temperature | 175°C |
| Package Type | LFPAK |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 27A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 31.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 28W |
| Typical Gate Charge Qg @ Vgs | 5nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Provides high efficiency in compact electronic designs.
- Enhancement mode channel ensures reliable switching performance.
- Surface mount LFPAK package with 4 pins enables space-saving PCB layout.
- Maximum power dissipation of 28 W supports robust operation.
- Wide operating temperature range from -55°C to 175°C for industrial environments.
- Low on-resistance of 31.5 mΩ reduces conduction losses.
- Typical gate charge of 5 nC minimizes driver power consumption.
- Maximum gate-source voltage rating of 20 V for flexible gate drive design.
Product Description
onsemi NTMYS021N06CLTWG is a high-performance N-Channel MOSFET designed primarily for industrial power applications. This device supports a maximum continuous drain current of 27 A and a drain-source voltage rating of up to 60 V. It is packaged in a compact 4-pin LFPAK surface mount package measuring 5 mm in length, 4.25 mm in width, and 1.15 mm in height, making it suitable for dense PCB layouts where space is a premium.
The MOSFET operates in enhancement mode and offers a low on-resistance of 31.5 milliohms, which significantly reduces conduction losses, improving overall circuit efficiency. With a maximum power dissipation capacity of 28 W, it can safely handle high power loads in demanding environments.
The device maintains robust performance across a wide temperature range from -55°C minimum to a maximum operating temperature of 175°C, making it ideal for industrial, automotive (non-automotive standard), and manufacturing applications requiring durable semiconductors.
The gate charge is minimized at 5 nC typical, enabling low power consumption in the gate driver circuitry, and the maximum gate-source voltage is rated at 20 V, providing flexibility in driving voltages. A forward voltage of 1.2 V supports efficient switching operations.
Small footprint LFPAK4 package for compact PCB design. Low RDS(on) minimizes power losses in conduction. High thermal performance supports reliable operation under load. Wide operating temperature range suitable for harsh industrial conditions.
Enhancement mode NMOS for efficient switching. Surface mount technology compatible for automated manufacturing. 4-pin configuration supports standard circuitry layouts. Pb-free and RoHS compliant construction. Typical gate charge reduces driver losses.
Maximum continuous current and voltage ratings provide design headroom.
This MOSFET is suitable for industrial power management, motor controls, DC-DC converters, and switching applications in electronics, semiconductor, and electrical component assemblies.
Explore more on semi-conductors and MOSFET offerings from onsemi at EnvMart for your electronic component sourcing needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 27 A.
This MOSFET has a maximum drain-source voltage rating of 60 V.
The on-resistance of this model is 31.5 mΩ, which helps reduce conduction losses.
The typical gate charge for this MOSFET is 5 nC, minimizing driver power consumption.
It operates within a wide temperature range of -55°C to 175°C.
This model is packaged in a 4-pin LFPAK surface mount package.
The maximum power dissipation capacity is 28 W, allowing it to handle high power loads.
The forward voltage for this model is 1.2 V, supporting efficient switching operations.
The LFPAK package measures 1.15 mm in height, 5 mm in length, and 4.25 mm in width.
This device uses an enhancement mode N-channel configuration.
The maximum gate-source voltage rating for this model is 20 V.
This MOSFET is manufactured in India.
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