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Wolfspeed Half Bridge N-Channel MOSFET 450 A, 1.2 kV CAB450M12XM3

Category MOSFET Brand Wolfspeed Condition New

Specifications

Country of Origin United States
Brand Wolfspeed
Height 15.75mm
Length 80mm
Model CAB450M12XM3
Width 53mm
Mount Type Screw
Maximum Operating Temperature 175°C
Minimum Operating Temperature -40°C
Channel Type N
Maximum Continuous Drain Current Id 450A
Maximum Drain Source Voltage Vds 1.2kV
Maximum Drain Source Resistance Rds 3.7mΩ
Maximum Power Dissipation Pd 50mW
Typical Gate Charge Qg @ Vgs 1330nC
Maximum Gate Source Voltage Vgs -4, 19V
Forward Voltage Vf 4.7V
Transistor Configuration Half Bridge

Key Features

  • Operates efficiently at high temperatures up to 175°C.
  • Features a low maximum drain source resistance of 3.7 milliohms.
  • Includes a dedicated drain-Kelvin pin for optimal conduction.
  • Designed with a silicon nitride insulator and copper baseplate for durability.
  • Typical gate charge of 1330 nC ensures effective gate drive performance.
  • Mount type using screws simplifies installation in power applications.
  • Compact dimensions of 80 mm length, 53 mm width, and 15.75 mm height.
  • Ideal for motor and traction drives, UPS, and EV charger power electronics.

Product Description

Wolfspeed CAB450M12XM3 is a Half Bridge N-Channel MOSFET engineered for demanding power semiconductor applications. Rated for a maximum continuous drain current of 450 amperes and a maximum drain source voltage of 1.2 kilovolts, it supports high power density and high temperature operation up to 175°C. Its half bridge transistor configuration with dedicated features like a drain-Kelvin pin and low inductance design facilitates efficient power switching and conduction.

The device incorporates conduction-optimized third generation MOSFET technology enhancing its performance in motor drives, traction systems, UPS units, and electric vehicle chargers. Its screw mount type supports robust and straightforward installation. With compact dimensions of 80 mm length, 53 mm width, and 15.75 mm height, it balances size and power handling effectively.

Additional features include a forward voltage drop of 4.7 V, maximum drain source resistance of 3.7 milliohms, and a typical gate charge of 1330 nC at gate-source voltage. Constructed with a silicon nitride insulator and copper baseplate, it provides superior thermal conduction and insulation.

This MOSFET does not conform to automotive standards and is manufactured in the United States, reflecting a quality build for industrial electronic components. High power density footprint suitable for compact power modules.

Capable of sustaining high temperature operation at 175 °C. Low inductance design to reduce switching losses and improve efficiency. Dedicated drain-Kelvin pin for enhanced conduction and reduced noise. Ideal for applications in motor and traction drives, UPS, and EV charging stations.

Robust construction with screw mount assembly for durability. Silicon nitride insulator combined with copper baseplate for optimal heat dissipation. Explore more Wolfspeed power semiconductor devices and electronic components at EnvMart for industrial applications.

Wolfspeed Half Bridge N-Channel MOSFET 450 A, 1.2 kV CAB450M12XM3
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Frequently Asked Questions

The maximum continuous drain current for this model is 450 amperes.

It has a maximum drain source voltage rating of 1.2 kilovolts.

The typical gate charge at gate-source voltage is 1330 nC.

The dimensions of this unit are 80 mm in length, 53 mm in width, and 15.75 mm in height.

This MOSFET can operate at a maximum temperature of 175°C.

It uses a screw mount type for installation.

The maximum drain source resistance is 3.7 milliohms.

The forward voltage drop is 4.7 V.

This model is configured as a half bridge transistor.

The minimum operating temperature is -40°C.

It is suitable for applications in motor and traction drives, UPS, and electric vehicle chargers.

This MOSFET is manufactured in the United States.

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