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STMicroelectronics P-Channel STripFET Power MOSFET, 10 A, 40 V, 8-Pin SOIC STS10P4LLF6

Category Power MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin China
Brand STMicroelectronics
Height 1.5mm
Length 5mm
Model STS10P4LLF6
Width 4mm
Mount Type Surface
Series STripFET
Maximum Operating Temperature 150°C
Package Type SOIC
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type Type P
Maximum Continuous Drain Current Id 10A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 20mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 2.7W
Typical Gate Charge Qg @ Vgs 34nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -1.1V

Key Features

  • Features an 8-pin SOIC surface-mount package for compact PCB designs.
  • Equipped with ultra-low gate charge and low on-resistance for efficient switching.
  • Supports operation from -55°C to 150°C for reliable performance in harsh environments.
  • Maximum power dissipation of 2.7 W ensures adequate thermal management.
  • Enhancement mode device with typical gate charge of 34 nC at Vgs.
  • Maximum drain-source resistance of 20 milliohms minimizes conduction losses.
  • Designed for use in power management and switching applications.
  • Typical forward voltage of -1.1 V for P-Channel operation.

Product Description

STMicroelectronics STS10P4LLF6 is a P-Channel STripFET Power MOSFET designed for high-efficiency electronic circuits needing compact and reliable power switching components. It supports a maximum continuous drain current of 10 A and a drain-source voltage of 40 V, suitable for medium power switching applications in industrial and consumer electronics.

This MOSFET features an 8-pin SOIC surface-mount package providing easy integration in high-density board layouts. The device operates efficiently with ultra-low gate charge and low on-resistance characteristics, minimizing switching losses and heat generation.

Operating temperature ranges from -55°C to 150°C, ensuring performance stability even in extreme environmental conditions. With a maximum power dissipation of 2.7 W, this transistor supports effective thermal management in compact electronic assemblies.

The enhancement channel mode MOSFET exhibits a typical gate charge of 34 nC which facilitates fast switching speeds in power electronics. It has a maximum drain-source resistance of 20 milliohms, promoting energy-efficient conduction and reducing power loss.

Typical forward voltage is -1.1 V, important for P-Channel operation characteristics. The product is well suited for industrial electronics, power supplies, motor control circuits, and other applications requiring robust MOSFET performance and reliability.

Features an 8-pin SOIC surface-mount package for compact PCB designs. Equipped with ultra-low gate charge and low on-resistance for efficient switching. Supports operation from -55°C to 150°C for reliable performance in harsh environments.

Maximum power dissipation of 2.7 W ensures adequate thermal management. Enhancement mode device with typical gate charge of 34 nC at Vgs. Maximum drain-source resistance of 20 milliohms minimizes conduction losses. Designed for use in power management and switching applications.

Typical forward voltage of -1.1 V for P-Channel operation. Ideal for use in industrial, electronic, and power management applications, the STS10P4LLF6 supports efficient circuit design and improved energy handling. Explore other Power MOSFETs and semiconductor devices at EnvMart for comprehensive electronic solutions.

STMicroelectronics P-Channel STripFET Power MOSFET, 10 A, 40 V, 8-Pin SOIC STS10P4LLF6
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Frequently Asked Questions

The maximum continuous drain current for this model is 10 A.

It can handle a maximum drain-source voltage of 40 V.

This MOSFET is housed in an 8-pin SOIC surface-mount package.

The operating temperature range is from -55°C to 150°C.

The maximum power dissipation is 2.7 W.

The typical gate charge at Vgs is 34 nC.

The maximum drain-source resistance is 20 milliohms.

The typical forward voltage for P-Channel operation is -1.1 V.

This model utilizes a P-channel type channel.

It is designed for power management and switching applications in industrial and consumer electronics.

The dimensions are 5 mm in length, 4 mm in width, and 1.5 mm in height.

The maximum gate-source voltage is -20 V to +20 V.

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