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| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 1.5mm |
| Length | 5mm |
| Model | STS10P4LLF6 |
| Width | 4mm |
| Mount Type | Surface |
| Series | STripFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 10A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 20mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.7W |
| Typical Gate Charge Qg @ Vgs | 34nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.1V |
STMicroelectronics STS10P4LLF6 is a P-Channel STripFET Power MOSFET designed for high-efficiency electronic circuits needing compact and reliable power switching components. It supports a maximum continuous drain current of 10 A and a drain-source voltage of 40 V, suitable for medium power switching applications in industrial and consumer electronics.
This MOSFET features an 8-pin SOIC surface-mount package providing easy integration in high-density board layouts. The device operates efficiently with ultra-low gate charge and low on-resistance characteristics, minimizing switching losses and heat generation.
Operating temperature ranges from -55°C to 150°C, ensuring performance stability even in extreme environmental conditions. With a maximum power dissipation of 2.7 W, this transistor supports effective thermal management in compact electronic assemblies.
The enhancement channel mode MOSFET exhibits a typical gate charge of 34 nC which facilitates fast switching speeds in power electronics. It has a maximum drain-source resistance of 20 milliohms, promoting energy-efficient conduction and reducing power loss.
Typical forward voltage is -1.1 V, important for P-Channel operation characteristics. The product is well suited for industrial electronics, power supplies, motor control circuits, and other applications requiring robust MOSFET performance and reliability.
Features an 8-pin SOIC surface-mount package for compact PCB designs. Equipped with ultra-low gate charge and low on-resistance for efficient switching. Supports operation from -55°C to 150°C for reliable performance in harsh environments.
Maximum power dissipation of 2.7 W ensures adequate thermal management. Enhancement mode device with typical gate charge of 34 nC at Vgs. Maximum drain-source resistance of 20 milliohms minimizes conduction losses. Designed for use in power management and switching applications.
Typical forward voltage of -1.1 V for P-Channel operation. Ideal for use in industrial, electronic, and power management applications, the STS10P4LLF6 supports efficient circuit design and improved energy handling. Explore other Power MOSFETs and semiconductor devices at EnvMart for comprehensive electronic solutions.
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