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STMicroelectronics P-Channel STripFET Power MOSFET, 2 A, 30 V Enhancement, 3-Pin SOT-23 STR2P3LLH6
Specifications
| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 1.3mm |
| Length | 3.04mm |
| Model | STR2P3LLH6 |
| Width | 1.75mm |
| Mount Type | Surface |
| Series | STripFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 2A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 90mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 350mW |
| Typical Gate Charge Qg @ Vgs | 6nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.1V |
Key Features
- Offers ultra-low gate charge of 6nC at Vgs enhancing switching efficiency.
- Features a maximum drain-source resistance of 90mΩ for low conduction losses.
- Supports a wide operating temperature range from -55°C to 150°C ensuring reliability.
- Maximum power dissipation is 350mW suitable for compact power applications.
- Equipped with a robust gate-source voltage tolerance of -20 V to +20 V.
- Compact dimensions with 3.04mm length, 1.75mm width, and 1.3mm height in SOT-23 package.
- Designed for surface mount applications with 3 pins facilitating easy PCB integration.
- Constructed with enhancement mode channel for efficient power control in circuits.
Product Description
STMicroelectronics STR2P3LLH6 is a high-performance P-Channel STripFET™ Power MOSFET featuring a 2 A maximum continuous drain current and 30 V maximum drain-source voltage. Packaged in a compact 3-pin SOT-23 surface-mount package, this device is engineered for efficient power management in electronic circuits.
This MOSFET offers ultra-low gate charge (6nC at Vgs) and a low maximum drain-source resistance of 90mΩ, enabling reduced switching losses and improved thermal performance. Its enhancement mode channel type provides reliable and precise power control.
Operating within a broad temperature range from -55°C minimum to 150°C maximum, the STR2P3LLH6 ensures dependable operation in industrial, automotive, and consumer electronics applications. The device is capable of handling a maximum power dissipation of 350mW, supporting compact and efficient power delivery.
The gate-source voltage rating of -20 V to +20 V accommodates varied circuit requirements while maintaining device integrity. Dimensions of 3.04mm length, 1.75mm width, and 1.3mm height in the SOT-23 package make this MOSFET suitable for surface mounting on space-constrained PCBs.
Ultra-low gate charge for high switching efficiency. Low on-resistance minimizes conduction losses. Wide temperature range supports harsh environments. Surface mount 3-pin SOT-23 package for PCB integration. Enhancement mode channel provides precise control.
Compact dimensions for space-saving designs. Maximum power dissipation of 350mW. High gate-source voltage tolerance enhances versatility.
This STR2P3LLH6 MOSFET is widely applicable in power management, signal switching, and amplification circuits in industrial, automotive, telecommunications, and household electronics. Its high efficiency and compact form factor make it a reliable choice for modern electronic design.
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Frequently Asked Questions
The STR2P3LLH6 has a maximum continuous drain current of 2 A.
This model supports a maximum drain-source voltage of 30 V.
The typical gate charge at Vgs for the STR2P3LLH6 is 6 nC.
The SOT-23 package has dimensions of 3.04 mm in length, 1.75 mm in width, and 1.3 mm in height.
The maximum power dissipation for the STR2P3LLH6 is 350 mW.
The maximum gate-source voltage rating for this model is -20 V to +20 V.
The maximum drain-source resistance for this P-Channel MOSFET is 90 mΩ.
The operating temperature range for the STR2P3LLH6 is from -55°C to 150°C.
This model utilizes an enhancement mode P-channel type channel.
The SOT-23 package of the STR2P3LLH6 has 3 pins.
This MOSFET is designed for surface mounting applications.
The STR2P3LLH6 belongs to the STripFET series.
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