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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.17mm |
| Length | 6.6mm |
| Model | STD11N60DM2 |
| Width | 6.2mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 10A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 420mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 110W |
| Typical Gate Charge Qg @ Vgs | 16.5nC |
| Maximum Gate Source Voltage Vgs | 25V |
| Forward Voltage Vf | 1.6V |
STMicroelectronics STD11N60DM2 is a high voltage N-channel Power MOSFET designed for advanced electronic power conversion solutions. It features an enhancement mode channel providing excellent switching performance with a maximum drain current of 10 amperes and a drain-source voltage rating of 650 volts. Packaged in a compact TO-252 surface mount package with three pins, it suits modern compact PCB designs.
The device’s very low on-resistance (420 milliohms) and extremely low gate charge (16.5 nC at Vgs) enable high efficiency and rapid switching, reducing power losses and thermal stress in demanding industrial, automotive, and power management applications. It supports a maximum gate-source voltage of 25 volts and dissipates up to 110 watts, making it reliable under high power conditions and wide operating temperatures from -55°C to 150°C.
Unique features include a fast-recovery body diode optimized for high efficiency bridge circuits and zero voltage switching (ZVS) phase-shift converters. Its gate is zener-protected for enhanced ruggedness, ensuring durability in harsh operating environments.
Typical applications include switching power supplies, motor control circuits, voltage regulators, power inverters, and automotive electronics where efficient power handling and thermal stability are critical. The compact TO-252 package facilitates surface mounting on densely populated boards, aiding modern electronics manufacturing.
Enhancement mode N-channel MOSFET with 10 A continuous drain current. 650 V maximum drain-source voltage ensures robustness in high voltage scenarios. Low on-resistance of 420 mΩ minimizes conduction loss during operation.
High power dissipation rating of 110 W supports demanding thermal loads. Fast recovery diode for efficient switching in power converter circuits. Extremely low typical gate charge (16.5 nC) enables rapid switching response.
Wide temperature tolerance from -55°C to 150°C for reliable use in industrial environments. Compact TO-252 surface mount package standardizes installation and saves space. Applications include industrial power converters, automotive electronics, and general electronic power management.
Choose STMicroelectronics STD11N60DM2 for high efficiency, durable N-channel MOSFET solutions in a highly compact form factor. Explore our Electronics & Electricals category for more power semiconductor devices and components suitable for industrial and commercial electronics.
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