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STMicroelectronics N-Channel MOSFET, 10 A, 650 V Enhancement Mode, TO-252 Package STD11N60DM2

Category Power MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 2.17mm
Length 6.6mm
Model STD11N60DM2
Width 6.2mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 10A
Maximum Drain Source Voltage Vds 650V
Maximum Drain Source Resistance Rds 420mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 110W
Typical Gate Charge Qg @ Vgs 16.5nC
Maximum Gate Source Voltage Vgs 25V
Forward Voltage Vf 1.6V

Key Features

  • Enhancement mode N-channel MOSFET designed for efficient switching applications.
  • Low drain-source resistance of 420 milliohms, reducing conduction losses.
  • Supports maximum gate-source voltage up to 25 volts ensuring robust operation.
  • High power dissipation rating of 110 watts for demanding thermal conditions.
  • Operates reliably across a wide temperature range from -55°C to 150°C.
  • Extremely low gate charge of 16.5 nC enables fast switching and improved efficiency.
  • Compact dimensions of 6.6 mm length, 6.2 mm width, and 2.17 mm height for space savings.
  • Includes a fast-recovery body diode suitable for bridge topologies and ZVS phase-shift converters.

Product Description

STMicroelectronics STD11N60DM2 is a high voltage N-channel Power MOSFET designed for advanced electronic power conversion solutions. It features an enhancement mode channel providing excellent switching performance with a maximum drain current of 10 amperes and a drain-source voltage rating of 650 volts. Packaged in a compact TO-252 surface mount package with three pins, it suits modern compact PCB designs.

The device’s very low on-resistance (420 milliohms) and extremely low gate charge (16.5 nC at Vgs) enable high efficiency and rapid switching, reducing power losses and thermal stress in demanding industrial, automotive, and power management applications. It supports a maximum gate-source voltage of 25 volts and dissipates up to 110 watts, making it reliable under high power conditions and wide operating temperatures from -55°C to 150°C.

Unique features include a fast-recovery body diode optimized for high efficiency bridge circuits and zero voltage switching (ZVS) phase-shift converters. Its gate is zener-protected for enhanced ruggedness, ensuring durability in harsh operating environments.

Typical applications include switching power supplies, motor control circuits, voltage regulators, power inverters, and automotive electronics where efficient power handling and thermal stability are critical. The compact TO-252 package facilitates surface mounting on densely populated boards, aiding modern electronics manufacturing.

Enhancement mode N-channel MOSFET with 10 A continuous drain current. 650 V maximum drain-source voltage ensures robustness in high voltage scenarios. Low on-resistance of 420 mΩ minimizes conduction loss during operation.

High power dissipation rating of 110 W supports demanding thermal loads. Fast recovery diode for efficient switching in power converter circuits. Extremely low typical gate charge (16.5 nC) enables rapid switching response.

Wide temperature tolerance from -55°C to 150°C for reliable use in industrial environments. Compact TO-252 surface mount package standardizes installation and saves space. Applications include industrial power converters, automotive electronics, and general electronic power management.

Choose STMicroelectronics STD11N60DM2 for high efficiency, durable N-channel MOSFET solutions in a highly compact form factor. Explore our Electronics & Electricals category for more power semiconductor devices and components suitable for industrial and commercial electronics.

STMicroelectronics N-Channel MOSFET, 10 A, 650 V Enhancement Mode, TO-252 Package STD11N60DM2
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Frequently Asked Questions

The maximum continuous drain current for this model is 10 A.

It has a maximum drain-source voltage rating of 650 V.

The on-resistance is 420 milliohms, which helps minimize conduction losses.

This MOSFET has a high power dissipation rating of 110 watts.

The typical gate charge is 16.5 nC at Vgs, enabling fast switching.

It operates reliably across a temperature range from -55°C to 150°C.

It is packaged in a compact TO-252 surface mount package.

The maximum gate-source voltage supported is 25 V.

This model has a total of 3 pins.

Typical applications include switching power supplies, motor control circuits, and automotive electronics.

It includes a fast-recovery body diode optimized for efficient switching in power converter circuits.

It utilizes an enhancement mode N-channel design.

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