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onsemi SuperFET II N-Channel MOSFET 76 A 600 V Enhancement 3-Pin TO-247 FCH041N60F
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 20.82mm |
| Length | 15.87mm |
| Model | FCH041N60F |
| Width | 4.82mm |
| Mount Type | Through Hole |
| Series | SuperFET II |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 76A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 41mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 595W |
| Typical Gate Charge Qg @ Vgs | 277nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.2V |
Key Features
- Maximum continuous drain current of 76 amperes for robust current handling.
- 600 volts maximum drain source voltage ensuring suitability for high-voltage circuits.
- Enhancement mode channel type providing efficient switching capabilities.
- Packaged in a durable TO-247 through-hole format with 3 pins.
- Low maximum drain source resistance of 41 milliohms to minimize conduction losses.
- Maximum power dissipation of 595 watts supports high-power applications.
- Operates reliably within temperature range from -55°C to 150°C.
- Typical forward voltage drop of 1.2 volts aiding efficiency in power circuits.
Product Description
onsemi FCH041N60F is a SuperFET II N-Channel MOSFET designed for demanding industrial and commercial power applications requiring robust and efficient switching. It supports a maximum continuous drain current of 76 A and withstands a maximum drain source voltage of 600 V, packaged in a 3-pin TO-247 through-hole configuration for ease of mounting.
This MOSFET utilizes advanced Super Junction Technology delivering best-in-class body diode performance, making it ideal for AC-DC switch mode power supplies, servers, telecom equipment, industrial power supplies, UPS/ESS systems, solar inverters, and lighting applications. Its enhancement mode operation ensures efficient switching and low conduction losses due to the maximum drain source resistance of just 41 mΩ.
The device supports a broad operating temperature range from -55°C to 150°C and can dissipate up to 595 W power, highlighting its capability for high power density tasks. It has a typical forward voltage drop of 1.2 V and typical gate charge characteristics supporting fast switching speeds.
With dimensions of length 15.87 mm, width 4.82 mm, and height 20.82 mm, it is suitable for through-hole mounting in various industrial and electronic circuits. The product carries no automotive or specific standards approvals but is built for reliability and efficiency in power management.
Maximum continuous drain current of 76 amperes for robust current handling. 600 volts maximum drain source voltage ensuring suitability for high-voltage circuits. Enhancement mode channel type providing efficient switching capabilities.
Packaged in a durable TO-247 through-hole format with 3 pins. Low maximum drain source resistance of 41 milliohms to minimize conduction losses. Maximum power dissipation of 595 watts supports high-power applications. Operates reliably within temperature range from -55°C to 150°C.
Typical forward voltage drop of 1.2 volts aiding efficiency in power circuits. Advanced charge balance technology for superior performance in power supplies and inverters.
This MOSFET is widely used in industrial, electronic, telecom, and power conversion applications. It enables system designers to achieve reliable, efficient, and compact power solutions.
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Frequently Asked Questions
The maximum continuous drain current of this model is 76 amperes, allowing for robust current handling in various applications.
It has a maximum drain-source voltage rating of 600 volts, making it suitable for high-voltage circuits.
This unit is packaged in a TO-247 format, designed for through-hole mounting with 3 pins.
It can dissipate a maximum power of 595 watts, supporting high-power applications effectively.
The device operates reliably within a temperature range from -55°C to 150°C.
The typical forward voltage drop is 1.2 volts, which aids in efficiency during power circuit operations.
The maximum drain-source resistance is 41 milliohms, which helps minimize conduction losses.
The typical gate charge at Vgs is 277 nanocoulombs, supporting fast switching speeds.
This MOSFET is suitable for applications such as AC-DC switch mode power supplies, servers, telecom equipment, and solar inverters.
It features an N-channel type, which provides efficient switching capabilities.
The maximum gate-source voltage is -30V to +30V, which defines the limits for gate control.
This model utilizes advanced Super Junction Technology, delivering best-in-class body diode performance.
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