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onsemi SuperFET II N-Channel MOSFET, 20 A, 600 V Enhancement, 3-Pin TO-220 FCPF190N60
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 16.07mm |
| Length | 10.36mm |
| Model | FCPF190N60 |
| Width | 4.9mm |
| Mount Type | Through Hole |
| Series | SuperFET II |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 170mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 39W |
| Typical Gate Charge Qg @ Vgs | 57nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.2V |
Key Features
- Supports a continuous drain current of 20 A enabling robust performance.
- Maximum drain-source voltage rating of 600 V for high voltage applications.
- Features a TO-220 package with through-hole mount and 3 pins for easy integration.
- Utilizes SuperFET II series technology delivering enhanced performance and reliability.
- Channel mode is enhancement type suitable for switching applications.
- Maximum drain-source resistance of 170 mΩ ensuring low conduction losses.
- Operates in temperature ranges from -55°C to 150°C allowing use in harsh environments.
- Maximum power dissipation of 39 W supports efficient thermal handling.
Product Description
onsemi FCPF190N60 SuperFET II N-Channel MOSFET is engineered using advanced Super Junction Technology to provide superior efficiency and reliability in power switching applications.
This device features a continuous drain current rating of 20 A and a maximum drain-source voltage of 600 V, making it ideal for industrial, telecom, server power supplies, UPS, solar inverters, and lighting systems.
Packaged in a TO-220 form factor with through-hole mounting and a 3-pin configuration, the MOSFET offers ease of installation and excellent thermal performance with a maximum power dissipation of 39 W.
The enhancement mode operation and low drain-source resistance of 170 mΩ ensure minimal conduction losses and high switching efficiency. Operating temperature ranges from -55°C to 150°C allow for reliable performance in demanding industrial conditions.
Typical gate charge of 57 nC at Vgs and forward voltage of 1.2 V further optimize switching speed and efficiency. The maximum gate-source voltage rating between -30 V and +30 V protects the gate during high voltage switching.
Supports a continuous drain current of 20 A enabling robust performance. Maximum drain-source voltage rating of 600 V for high voltage applications. Through hole mounting in TO-220 package facilitates durable installation.
Utilizes SuperFET II series with advanced charge balance technology. Enhanced efficiency for AC-DC Switch Mode Power Supplies and industrial use. Wide operating temperature range ensures reliability in harsh environments.
Low maximum drain-source resistance reduces conduction losses. Integration-friendly 3-pin package optimized for switching performance. Forward voltage of 1.2 V for efficient operation. Designed for renewable energy systems, telecom, and power management.
With its robust design and high-performance specifications, the onsemi FCPF190N60 is suited for a broad range of applications including industrial power supplies, servers, telecom equipment, solar inverters, and lighting control systems.
Discover more power semiconductor solutions in EnvMart's discrete semiconductor category for comprehensive industrial and commercial applications.
Explore more products in our MOSFETs category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 20 A, enabling robust performance in various applications.
This unit has a maximum drain-source voltage rating of 600 V, making it suitable for high voltage applications.
It features a TO-220 package type with a through-hole mounting style, facilitating easy integration into circuits.
The maximum power dissipation for this MOSFET is 39 W, supporting efficient thermal handling during operation.
The maximum drain-source resistance is 170 mΩ, which ensures low conduction losses during operation.
This model uses an enhancement type channel, which is suitable for switching applications.
The typical gate charge at Vgs is 57 nC, optimizing switching speed and efficiency.
The forward voltage of this MOSFET is 1.2 V, contributing to its efficient operation.
The maximum gate-source voltage rating is between -30 V and +30 V, which protects the gate during high voltage switching.
The dimensions of this model are 16.07 mm in height, 10.36 mm in length, and 4.9 mm in width.
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