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onsemi UniFET N-Channel Enhancement MOSFET, 60 V, 55 A, 48 W, 3-Pin TO-220 FDPF55N06
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 16.07mm |
| Length | 10.36mm |
| Model | FDPF55N06 |
| Width | 4.9mm |
| Mount Type | Through Hole |
| Series | UniFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 55A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 22mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 48W |
| Typical Gate Charge Qg @ Vgs | 30nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.4V |
Key Features
- The MOSFET features a low on-state resistance of 22 mΩ ensuring high efficiency.
- It is housed in a TO-220 3-pin package suitable for through-hole mounting.
- Maximum power dissipation is rated at 48 W for demanding applications.
- Operating temperature range extends from -55°C to 150°C allowing robust operation.
- This MOSFET includes internal gate-source ESD protection diode.
- Typical gate charge at 30 V gate drive is 30 nC facilitating fast switching performance.
- Designed for power converter applications including power factor correction and electronic lamp ballasts.
Product Description
onsemi FDPF55N06 UniFET N-Channel Enhancement MOSFET is engineered for high efficiency switching power applications with a maximum drain current of 55 A and voltage rating of 60 V. It employs UniFET technology for reduced on-resistance and enhanced switching capabilities.
This device comes in a robust 3-pin TO-220 package designed for through-hole mounting, facilitating easy integration into industrial and commercial electronic circuits requiring reliable high-current switching.
Its typical gate charge of 30 nC and power dissipation limit of 48 W allow efficient operation in power converters, power factor correction circuits, flat panel displays, and electronic lamp ballasts.
The MOSFET operates reliably across a wide temperature range from -55°C to 150°C, making it suitable for harsh industrial environments.
Internal gate-source ESD diode protects against surge voltages, ensuring long-term reliability under high-stress conditions. Package dimensions are precisely 16.07 mm in height, 10.36 mm in length, and 4.9 mm in width.
The MOSFET features a low on-state resistance of 22 mΩ ensuring high efficiency. It is housed in a TO-220 3-pin package suitable for through-hole mounting. Maximum power dissipation is rated at 48 W for demanding applications.
Operating temperature range extends from -55°C to 150°C allowing robust operation. This MOSFET includes internal gate-source ESD protection diode. Typical gate charge at 30 V gate drive is 30 nC facilitating fast switching performance.
Designed for power converter applications including power factor correction and electronic lamp ballasts. Height, length, and width of the package are 16.07 mm, 10.36 mm, and 4.9 mm respectively. This onsemi UniFET MOSFET is ideal for industrial, electronic manufacturing, power management, and HVAC applications requiring efficient and reliable switching performance.
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Frequently Asked Questions
The maximum continuous drain current for this model is 55 A.
This MOSFET has a maximum drain-source voltage rating of 60 V.
The maximum power dissipation for this MOSFET is rated at 48 W.
It features a low on-state resistance of 22 mΩ, ensuring high efficiency.
The typical gate charge at a 30 V gate drive is 30 nC.
The package dimensions are 16.07 mm in height, 10.36 mm in length, and 4.9 mm in width.
The operating temperature range extends from -55°C to 150°C.
This MOSFET is designed for through-hole mounting.
Yes, it includes an internal gate-source ESD protection diode.
It is designed for power converter applications, including power factor correction and electronic lamp ballasts.
This model features an N-channel type.
The maximum gate-source voltage is -25 V to +25 V.
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