onsemi PowerTrench N-Channel MOSFET, 18 A, 60 V Enhancement Mode, 8-Pin SOIC FDS86540

onsemi FDS86540 PowerTrench N-Channel MOSFET is a high-performance discrete semiconductor device designed for efficient power switching and amplification in industrial, electronic, and power management applications. This enhancement mode N-channel MOSFET supports a maximum continuous drain current of 18 amperes and a maximum drain-source voltage of 60 volts, making it suitable for medium power circuits requiring robust control.

The device is housed in an 8-pin standard SOIC surface mount package that simplifies circuit board assembly and minimizes space. It features a low maximum drain-source resistance of 7 milliohms, contributing to lower conduction losses and improved energy efficiency.

Engineered with PowerTrench technology, the FDS86540 offers typical gate charge of 65 nanocoulombs at Vgs, allowing fast switching speed for high-frequency operation. Operating temperature capability from -55°C up to 150°C ensures stable performance in demanding thermal conditions typical in automotive, industrial control, and HVAC systems.

Additional product details include a forward voltage of 1.3 volts and a maximum gate-source voltage range from -20 to +20 volts, providing electrical reliability and protecting the device from gate overvoltage.

Physical dimensions with length of 4.9 mm, width of 3.9 mm, and height of 1.575 mm make it compact for dense assemblies while maintaining thermal efficiency.

This MOSFET is ideal for power management, motor control, battery protection circuits, and switching regulators in sectors such as industrial automation, telecommunications, and consumer electronics.

Choose onsemi PowerTrench N-Channel MOSFET FDS86540 for efficient and durable power semiconductor solutions. Browse additional discrete semiconductor components and power MOSFETs at EnvMart.

PowerTrench technology ensures low resistance and high efficiency. Maximum continuous drain current of 18 amperes enhances device capacity. Surface mount SOIC package with 8 pins enables easy PCB integration. Operating temperature range from -55°C to 150°C suitable for rugged applications.

Typical gate charge of 65 nC supports fast switching performance. Maximum power dissipation of 5 watts ensures reliable thermal handling. Forward voltage of 1.3 volts at rated current reduces power loss. Maximum gate-source voltage rating is -20 to +20 volts providing safe operating margin.

Compact dimensions with length 4.9 mm, width 3.9 mm, and height 1.575 mm. Enhancement mode N-channel type for controlled conduction in circuits.