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onsemi PowerTrench Type P-Channel MOSFET, 22 A, 150 V Enhancement Mode, 8-Pin WDFN Package FDMS86263P
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.05mm |
| Length | 5mm |
| Model | FDMS86263P |
| Width | 5.85mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | WDFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 22A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 94mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 104W |
| Typical Gate Charge Qg @ Vgs | 45nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | -1.3V |
Key Features
- This MOSFET uses enhancement-mode operation for efficient switching performance.
- It features a low maximum drain-source resistance of 94 milliohms for reduced power loss.
- The device supports a maximum power dissipation of 104 W suitable for high-power applications.
- It has a typical gate charge of 45 nanocoulombs at Vgs for fast switching.
- The MOSFET operates reliably between -55°C and 150°C providing wide temperature tolerance.
- Its maximum gate-source voltage ratings are ±25 V, ensuring robustness in control circuits.
- Package dimensions include a length of 5 mm, width of 5.85 mm, and height of 1.05 mm.
- The device features a soft reverse recovery body diode enabling fast synchronous rectification.
Product Description
onsemi FDMS86263P is a PowerTrench Type P-Channel MOSFET designed to handle continuous drain currents of up to 22 A and drain-source voltages of 150 V. It is housed in a compact 8-Pin WDFN surface-mount package measuring 5 mm by 5.85 mm with a 1.05 mm height.
This enhancement-mode MOSFET provides efficient switching performance with a maximum drain-source resistance (Rds) of 94 milliohms, enabling reduced conduction losses in power management circuits. The typical gate charge of 45 nanocoulombs at gate-source voltage Vgs supports fast switching speeds suitable for synchronous rectification in AC/DC power supplies.
The FDMS86263P features a maximum power dissipation of 104 W and can operate across a wide temperature range from -55°C up to 150°C, making it suitable for demanding industrial, automotive, and power supply applications. The device also supports a maximum gate-source voltage of ±25 V, enhancing its robustness against voltage spikes.
PowerTrench MOSFETs incorporate an advanced shielded-gate design that balances charge and improves the Figure of Merit (FOM), resulting in optimized efficiency and power density. Additionally, the soft reverse recovery body diode characteristic eliminates the need for snubber circuits, reducing system complexity.
This P-Channel MOSFET is ideal for use in power management, motor control, synchronous buck converters, and other switching applications within electronics, industrial controls, and automotive systems.
This MOSFET uses enhancement-mode operation for efficient switching performance. It features a low maximum drain-source resistance of 94 milliohms for reduced power loss. The device supports a maximum power dissipation of 104 W suitable for high-power applications.
It has a typical gate charge of 45 nanocoulombs at Vgs for fast switching. The MOSFET operates reliably between -55°C and 150°C providing wide temperature tolerance. Its maximum gate-source voltage ratings are ±25 V, ensuring robustness in control circuits.
Package dimensions include a length of 5 mm, width of 5.85 mm, and height of 1.05 mm. The device features a soft reverse recovery body diode enabling fast synchronous rectification. PowerTrench technology optimizes efficiency and power density in switching applications.
Explore the onsemi MOSFET collection on EnvMart for reliable components suited to your electronic designs and applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 22 A.
This MOSFET has a maximum drain-source voltage rating of 150 V.
It supports a maximum power dissipation of 104 W, making it suitable for high-power applications.
The typical gate charge at gate-source voltage Vgs is 45 nanocoulombs.
The package dimensions are 5 mm in length, 5.85 mm in width, and 1.05 mm in height.
It operates reliably between -55°C and 150°C, providing a wide temperature tolerance.
The maximum gate-source voltage ratings are ±25 V, ensuring robustness in control circuits.
This model uses surface mount technology.
The maximum drain-source resistance (Rds) is 94 milliohms, which helps reduce conduction losses.
It features a P-channel type with enhancement mode operation.
This MOSFET is suitable for power management, motor control, synchronous buck converters, and other switching applications.
The forward voltage of the body diode is -1.3 V.
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