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onsemi PowerTrench Type P-Channel MOSFET, 7.9 A, 100 V Enhancement, 8-Pin WDFN FDMS86163P
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.05mm |
| Length | 5mm |
| Model | FDMS86163P |
| Width | 5.85mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | WDFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 7.9A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 36mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 104W |
| Typical Gate Charge Qg @ Vgs | 42nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | -1.3V |
Key Features
- Rated for maximum continuous drain current of 7.9 A providing reliable high-current switching capabilities.
- Maximum drain-source voltage of 100 V suitable for various power management applications.
- PowerTrench series MOSFET optimized for increased system efficiency and power density.
- Features low gate charge of 42 nC enabling fast switching performance.
- Compact 8-pin WDFN package with dimensions 5 mm x 5.85 mm x 1.05 mm for space-constrained designs.
- Enhanced device stability with operating temperature range from -55°C to 150°C.
- Low on-resistance of 36 mΩ reduces conduction losses for improved energy efficiency.
- Suitable for surface mount mounting, enabling easy integration into PCBs.
Product Description
onsemi FDMS86163P is a PowerTrench® Type P-Channel MOSFET designed to offer efficient switching and high power handling capabilities for advanced electronic applications. This enhancement mode MOSFET supports a maximum continuous drain current of 7.9 A and a maximum drain-source voltage rating of 100 V, making it ideal for low-voltage power management systems and DC-DC converters.
The device is housed in a compact 8-pin WDFN surface mount package with overall dimensions of 5 mm length, 5.85 mm width, and 1.05 mm height, enabling utilizations in space-constrained industrial and commercial electronics.
PowerTrench MOSFET technology provides low gate charge (42 nC) and minimal reverse recovery charge characteristics. The shielded-gate structure improves charge balance, yielding a favorable figure of merit which contributes to higher switching efficiency and reduced power loss. The integrated soft body diode performance allows elimination of snubber circuits or replacement of higher voltage MOSFETs, facilitating design simplification and cost savings.
Operational temperature ranges from -55°C to +150°C ensure reliable performance in harsh industrial and automotive-like environments. The low on-resistance of 36 mΩ at typical conditions reduces conduction losses, enhancing overall system efficiency.
This MOSFET is designed for surface mount applications on printed circuit boards, widely used in industrial power supplies, computing, communications equipment, and consumer electronics requiring high-speed switching and thermal robustness.
Rated maximum continuous drain current: 7.9 A. Maximum drain-source voltage: 100 V. Low gate charge: 42 nC at Vgs. Package type: 8-pin WDFN for compact PCB integration. Operating temperature range: -55°C to 150°C. On-resistance: 36 mΩ for efficient conduction.
Power dissipation rating of 104 W supports high power operation. Soft body diode eliminates need for external snubber circuitry. Enhancement mode channel type improves switching control.
Ideal for industrial, commercial, and automotive power management, this onsemi FDMS86163P PowerTrench Type P-Channel MOSFET offers superior switching performance and durability. Explore more semiconductors and MOSFETs for your electronic design projects on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 7.9 A.
This MOSFET has a maximum drain-source voltage rating of 100 V.
The typical gate charge at Vgs is 42 nC, which enables fast switching performance.
The MOSFET is housed in an 8-pin WDFN package with dimensions of 5 mm in length, 5.85 mm in width, and 1.05 mm in height.
The on-resistance is 36 mΩ, which helps reduce conduction losses.
It operates within a temperature range of -55°C to 150°C.
This model supports surface mount mounting, making it suitable for PCB integration.
The maximum power dissipation rating for this MOSFET is 104 W.
It is suitable for industrial power supplies, computing, communications equipment, and consumer electronics requiring high-speed switching.
This model features a Type P channel, designed for enhancement mode operation.
The forward voltage of the integrated soft body diode is -1.3 V.
This model belongs to the PowerTrench series, which is optimized for increased system efficiency and power density.
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