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onsemi PowerTrench N-Channel MOSFET 150 V, 167 A, Enhancement Mode, 3-Pin TO-247 FDH055N15A

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 4.82mm
Length 20.82mm
Model FDH055N15A
Width 15.87mm
Mount Type Through Hole
Series PowerTrench
Maximum Operating Temperature 175°C
Package Type TO-247
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 167A
Maximum Drain Source Voltage Vds 150V
Maximum Drain Source Resistance Rds 5.9mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 429W
Typical Gate Charge Qg @ Vgs 92nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.25V

Key Features

  • Enhancement mode N-Channel type transistor designed for high efficiency.
  • Maximum power dissipation of 429 W ensures robust operation.
  • Low maximum drain source resistance of 5.9 milliohms reduces conduction losses.
  • Typical gate charge of 92 nC allows fast switching performance.
  • Operating temperature range from -55°C to 175°C supports industrial applications.
  • Through hole mounting suitable for easy PCB integration.
  • Forward voltage drop of 1.25 V ensures efficient conduction.
  • Maximum allowable gate source voltage is -20 V to +20 V for flexible control.

Product Description

onsemi FDH055N15A PowerTrench N-Channel MOSFET is a high-performance discrete semiconductor designed for power switching applications requiring up to 167 A continuous current and 150 V drain-to-source voltage. Packaged in a durable 3-pin TO-247 case, this device uses an enhancement mode channel to deliver efficient conduction and fast switching, making it suitable for industrial, power management, and electronic manufacturing uses.

Its maximum power dissipation of 429 W ensures reliable operation under demanding thermal conditions. The device features a very low maximum drain-source resistance of 5.9 milliohms, minimizing power losses for enhanced efficiency in electronic circuits.

The typical gate charge of 92 nC at Vgs affords rapid switching capabilities, enabling better control in pulse-width modulation and power regulation circuits. Supporting a wide operating temperature range from -55°C to 175°C, the FDH055N15A is suitable for use in harsh industrial environments and automotive electronics.

The TO-247 package design supports through-hole mounting, facilitating robust mechanical and thermal connections on printed circuit boards. Physical dimensions of 20.82 mm length, 15.87 mm width, and 4.82 mm height contribute to a compact footprint for power assemblies.

The device also provides a forward voltage drop of 1.25 V, which helps enhance overall power efficiency. The gate-source voltage limits are from -20 V to +20 V, allowing flexible drive voltage configurations for different applications.

Enhancement mode N-Channel MOSFET optimized for power applications. High maximum continuous drain current of 167 A supports heavy-load circuits. Robust TO-247 package ensures durability and excellent heat dissipation. Low Rds(on) of 5.9 milliohms improves conduction efficiency.

Wide operating temperature range suits industrial and automotive use. High power dissipation rating up to 429 W. Compact size for space-saving PCB configurations. Suitable for power supplies, motor controls, and high-current switching.

This onsemi MOSFET is ideal for electronics engineers and technicians deploying power conversion, motor drive, and industrial automation systems. The device’s proven reliability and performance provide confidence for demanding commercial and manufacturing environments. Explore additional MOSFETs and related semiconductor devices within EnvMart's comprehensive catalog for high-quality electronic components trusted worldwide.

onsemi PowerTrench N-Channel MOSFET 150 V, 167 A, Enhancement Mode, 3-Pin TO-247 FDH055N15A
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Frequently Asked Questions

The maximum continuous drain current for the FDH055N15A is 167 A, making it suitable for heavy-load circuits.

This MOSFET can handle a maximum drain-source voltage of 150 V.

The typical gate charge is 92 nC at Vgs, allowing for rapid switching performance.

The dimensions of the TO-247 package are 20.82 mm in length, 15.87 mm in width, and 4.82 mm in height.

The maximum power dissipation of the FDH055N15A is 429 W, ensuring reliable operation under demanding conditions.

The maximum drain-source resistance (Rds(on)) is 5.9 milliohms, which helps minimize conduction losses.

This MOSFET operates within a temperature range of -55°C to 175°C, suitable for industrial applications.

The FDH055N15A supports through-hole mounting, facilitating easy integration onto printed circuit boards.

The forward voltage drop of the FDH055N15A is 1.25 V, contributing to its overall power efficiency.

The maximum allowable gate-source voltage is -20 V to +20 V, providing flexibility in control configurations.

This model uses an enhancement mode N-channel configuration, optimized for power applications.

The FDH055N15A is manufactured in India.

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