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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 4.82mm |
| Length | 20.82mm |
| Model | FDH055N15A |
| Width | 15.87mm |
| Mount Type | Through Hole |
| Series | PowerTrench |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 167A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 5.9mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 429W |
| Typical Gate Charge Qg @ Vgs | 92nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.25V |
onsemi FDH055N15A PowerTrench N-Channel MOSFET is a high-performance discrete semiconductor designed for power switching applications requiring up to 167 A continuous current and 150 V drain-to-source voltage. Packaged in a durable 3-pin TO-247 case, this device uses an enhancement mode channel to deliver efficient conduction and fast switching, making it suitable for industrial, power management, and electronic manufacturing uses.
Its maximum power dissipation of 429 W ensures reliable operation under demanding thermal conditions. The device features a very low maximum drain-source resistance of 5.9 milliohms, minimizing power losses for enhanced efficiency in electronic circuits.
The typical gate charge of 92 nC at Vgs affords rapid switching capabilities, enabling better control in pulse-width modulation and power regulation circuits. Supporting a wide operating temperature range from -55°C to 175°C, the FDH055N15A is suitable for use in harsh industrial environments and automotive electronics.
The TO-247 package design supports through-hole mounting, facilitating robust mechanical and thermal connections on printed circuit boards. Physical dimensions of 20.82 mm length, 15.87 mm width, and 4.82 mm height contribute to a compact footprint for power assemblies.
The device also provides a forward voltage drop of 1.25 V, which helps enhance overall power efficiency. The gate-source voltage limits are from -20 V to +20 V, allowing flexible drive voltage configurations for different applications.
Enhancement mode N-Channel MOSFET optimized for power applications. High maximum continuous drain current of 167 A supports heavy-load circuits. Robust TO-247 package ensures durability and excellent heat dissipation. Low Rds(on) of 5.9 milliohms improves conduction efficiency.
Wide operating temperature range suits industrial and automotive use. High power dissipation rating up to 429 W. Compact size for space-saving PCB configurations. Suitable for power supplies, motor controls, and high-current switching.
This onsemi MOSFET is ideal for electronics engineers and technicians deploying power conversion, motor drive, and industrial automation systems. The device’s proven reliability and performance provide confidence for demanding commercial and manufacturing environments. Explore additional MOSFETs and related semiconductor devices within EnvMart's comprehensive catalog for high-quality electronic components trusted worldwide.
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