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onsemi PowerTrench N-Channel MOSFET, 229 A, 80 V Enhancement, 7-Pin TO-263 FDB024N08BL7

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onsemi PowerTrench N-Channel MOSFET, 229 A, 80 V Enhancement, 7-Pin TO-263 FDB024N08BL7

Name: onsemi PowerTrench N-Channel MOSFET, 229 A, 80 V Enhancement, 7-Pin TO-263 FDB024N08BL7
Brand: onsemi
SKU: 260442
Price: 4.53 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	4.7mm
Length	10.2mm
Model	FDB024N08BL7
Width	9.4mm
Mount Type	Surface
Series	PowerTrench
Maximum Operating Temperature	175°C
Package Type	TO-263
Minimum Operating Temperature	-55°C
Pin Count	7
Channel Type	N
Maximum Continuous Drain Current Id	229A
Maximum Drain Source Voltage Vds	80V
Maximum Drain Source Resistance Rds	2.4mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	246W
Typical Gate Charge Qg @ Vgs	137nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.3V

Key Features

Features a 7-pin TO-263 surface mount package ensuring compact integration.
Maximum power dissipation rating of 246 W supports high-performance applications.
Low drain-source resistance of 2.4 mΩ enhances efficiency and reduces power loss.
Operational temperature range from -55°C to 175°C enables use in harsh environments.
Typical gate charge of 137 nC facilitates fast switching capabilities.
Maximum gate-source voltage of ±20 V ensures device reliability and safety.
Forward voltage of 1.3 V supports efficient conduction in circuits.
Compact dimensions of 10.2 mm length, 9.4 mm width, and 4.7 mm height facilitate PCB space optimization.

Product Description

onsemi FDB024N08BL7 is a PowerTrench® N-Channel MOSFET designed for high current and voltage handling capabilities with precise enhancement mode control. The device supports a maximum continuous drain current of 229 A and a drain-source voltage rating of 80 V, suitable for demanding power switching applications.

This MOSFET features a surface mount 7-pin TO-263 package that supports efficient thermal dissipation and compact PCB layouts. Its low drain-source resistance of 2.4 mΩ provides high efficiency and reduced power dissipation, with a maximum power rating of 246 W ensuring reliable performance under heavy load.

With a wide operating temperature range from -55°C to 175°C, the FDB024N08BL7 is suitable for use in industrial, automotive, and power management applications. The device's typical gate charge of 137 nC at Vgs allows for rapid switching, aiding in high-frequency circuit designs.

The maximum gate-source voltage of ±20 V protects the MOSFET from voltage spikes and ensures safe operation. Forward voltage of 1.3 V contributes to optimized conduction and energy efficiency.

Compact device dimensions - length 10.2 mm, width 9.4 mm, height 4.7 mm - enable easy integration into space-constrained applications.

This PowerTrench N-Channel MOSFET is ideal for use in power supplies, motor control, automotive electronics, battery management systems, and other industrial semiconductor uses where high current and reliability are critical.

Features a 7-pin TO-263 surface mount package. Supports continuous drain current up to 229 A. Offers a maximum drain-source voltage of 80 V. Low on-resistance of 2.4 mΩ enhances efficiency. Wide operating temperature range from -55°C to 175°C.

Typical gate charge of 137 nC allows fast switching. Maximum gate-source voltage ±20 V protects device integrity. Compact package dimensions optimize PCB layout. Explore more semiconductor and MOSFET options suitable for industrial, automotive, and electronic component applications at EnvMart.