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onsemi N-Channel Small Signal MOSFET, 0.5 A, 60 V, 3-Pin TO-92 Package BS170-D75Z
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 5.33mm |
| Length | 4.19mm |
| Model | BS170-D75Z |
| Width | 5.2mm |
| Mount Type | Through Hole |
| Series | BS170 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-92 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Number of Elements per Chip | 1 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 0.5A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 5Ω |
| Maximum Power Dissipation Pd | 350mW |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- The transistor features a 3-pin TO-92 through-hole package for easy mounting.
- Maximum power dissipation is 350 mW enabling efficient operation in small signal applications.
- Maximum gate-source voltage rating is 20 V for reliable switching.
- It can operate in temperatures ranging from -55°C to 150°C.
- The device has a maximum drain-source resistance of 5 ohms.
- Compact dimensions include length 4.19 mm, width 5.2 mm, and height 5.33 mm.
- Designed for general purpose small signal applications across electronics and electrical projects.
Product Description
onsemi BS170-D75Z is a N-Channel Small Signal MOSFET designed for switching and amplification in electronic circuits. Its 0.5 A continuous drain current and 60 V drain-source voltage ratings make it suitable for low power switching applications.
The device is housed in a compact 3-pin TO-92 package providing easy through-hole mounting. This MOSFET offers a maximum power dissipation of 350 mW, ensuring thermal safety in typical operating conditions.
It supports a gate-source voltage up to 20 V, enabling efficient control voltages in various circuit designs. It is operational in a wide temperature range from -55°C to 150°C, suitable for industrial, commercial, and hobbyist use.
Practical applications include use in general switching, amplification, and driver circuits across electronic and electrical engineering fields. Its characteristics make it ideal for circuit prototyping, instrumentation, automation control, and embedded system integration.
The transistor features a 3-pin TO-92 through-hole package for easy mounting. Maximum power dissipation is 350 mW enabling efficient operation in small signal applications. Maximum gate-source voltage rating is 20 V for reliable switching.
It can operate in temperatures ranging from -55°C to 150°C. The device has a maximum drain-source resistance of 5 ohms. Compact dimensions include length 4.19 mm, width 5.2 mm, and height 5.33 mm. Designed for general purpose small signal applications across electronics and electrical projects.
This MOSFET is a standard choice for electronics design requiring reliable, low power switching capability with minimal footprint. The TO-92 package ensures compatibility with through-hole printed circuit boards.
Explore more onsemiconductor MOSFET components and other electronic semiconductors on EnvMart to support your industrial, manufacturing, automotive, or laboratory projects.
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Frequently Asked Questions
The maximum continuous drain current for this model is 0.5 A.
The maximum drain-source voltage rating is 60 V.
It has a maximum power dissipation of 350 mW.
This model operates in a temperature range from -55°C to 150°C.
The device is housed in a TO-92 package type.
The dimensions are 4.19 mm in length, 5.2 mm in width, and 5.33 mm in height.
The maximum gate-source voltage rating is 20 V.
The maximum drain-source resistance is 5 ohms.
This MOSFET features a 3-pin configuration.
It supports through-hole mounting.
It is designed for general purpose small signal applications in electronic circuits, including switching and amplification.
The country of origin for this model is India.
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