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onsemi Dual 2 N-Channel MOSFET 1 A 100 V Surface Mount 6-Pin TSOT-23 Package FDC3601N
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1mm |
| Length | 3.1mm |
| Model | FDC3601N |
| Width | 3mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | TSOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 1A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 550mΩ |
| Maximum Power Dissipation Pd | 0.96W |
| Typical Gate Charge Qg @ Vgs | 3.7nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
| Transistor Configuration | Dual |
| SuperSOT™-6 package | small footprint 72%(smaller than standard SO-8), low profile (1mm thick) |
Key Features
- Advanced PowerTrench technology ensures low on-state resistance and minimal gate charge.
- Compact SuperSOT-6 package with a small footprint and low profile.
- Maximum continuous drain current of 1 ampere suitable for various general-purpose applications.
- Fast switching speed with typical gate charge of 3.7 nC.
- Low RDS(on) of 550 mΩ at VGS=6 V reducing power loss.
- Wide operating temperature range from -55°C to 150°C.
- Surface mount device compatible with modern PCB assembly.
- Dual transistor configuration with 2 elements per chip.
Product Description
onsemi FDC3601N Dual 2 N-Channel MOSFET is a compact semiconductor device packaged in a 6-pin TSOT-23 form factor, ideal for high-efficiency switching and general-purpose electronic applications. Featuring advanced PowerTrench technology, this MOSFET offers low on-state resistance and low gate charge, enhancing performance in compact circuits.
This device supports a maximum continuous drain current of 1 ampere and can handle voltages up to 100 V. It delivers fast switching capabilities with a typical gate charge of 3.7 nC, contributing to energy efficiency in switching power supplies and motor drives.
The SuperSOT-6 package offers a small footprint approximately 72 percent smaller than standard SO-8 packages, with a low profile of 1 mm thickness making it suitable for densely packed PCBs. Its robust thermal performance is ensured with a maximum operating temperature of 150°C and minimum temperature tolerance down to -55°C.
The FDC3601N's specification includes maximum power dissipation of 0.96 W and forward voltage of 1.2 V, making it suitable for reliable power management in a wide range of consumer and industrial electronics.
The MOSFET is configured as a dual transistor chip containing 2 elements, suitable for use in paired switching circuits or load sharing applications. The surface mount package ensures easy integration into automated production lines.
Advanced PowerTrench technology minimizes on-state resistance and gate charge. SuperSOT-6 package reduces PCB space with a thickness of only 1 mm. High voltage and current ratings enable various power switching applications.
Wide temperature tolerance allows operation in harsh environments. Dual device configuration suited for compact and efficient circuit designs.
This product is widely applicable across electronic manufacturing, power management modules, motor controls, and other industrial and consumer electronic systems. Its high performance and compact size facilitate efficient use of space and power resources in modern designs.
Explore more Dual N-Channel MOSFETs and other semiconductor components within the Discrete Semiconductors category at EnvMart to support your advanced electronic development projects.
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Frequently Asked Questions
The maximum continuous drain current of the FDC3601N is 1 ampere.
This model has a maximum drain-source voltage rating of 100 volts.
The typical gate charge for the FDC3601N at Vgs is 3.7 nC.
The maximum drain-source resistance (RDS(on)) is 550 mΩ at VGS=6 V.
The dimensions of this MOSFET are 3.1 mm in length, 3 mm in width, and 1 mm in height.
The operating temperature range for the FDC3601N is from -55°C to 150°C.
It is packaged in a 6-pin TSOT-23 surface mount configuration.
This model is suitable for high-efficiency switching and general-purpose electronic applications.
The maximum power dissipation for the FDC3601N is 0.96 watts.
The FDC3601N features a dual transistor configuration with 2 elements per chip.
The forward voltage (Vf) for the FDC3601N is 1.2 volts.
This model utilizes advanced PowerTrench technology to ensure low on-state resistance and minimal gate charge.
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