onsemi Power Transistor 40 A 100 V DC NPN 160 W TO-204 Through Hole 3-Pin 2N6284G

onsemi 2N6284G Power Transistor is a high-performance NPN bipolar transistor designed for industrial and electronic applications requiring robust power handling and amplification capabilities. It supports a maximum DC collector current of 40 amperes and can operate at a collector-emitter voltage of up to 100 volts DC within a sturdy TO-204 package.

This transistor is well-suited for general-purpose amplifier circuits and low-frequency switching applications where reliable performance and durability are critical. Its high maximum power dissipation rating of 160 watts allows it to sustain substantial loads without damage.

The 2N6284G features a minimum DC current gain (hFE) of 100 and a maximum transition frequency of 1 MHz, making it capable of moderate frequency switching tasks. Its construction includes built-in base-emitter shunt resistors enhancing its performance stability.

Operating temperature range from -65°C to 200°C ensures suitability for harsh industrial environments, including industrial manufacturing equipment, power management systems, and HVAC control circuits. The transistor's through hole mounting simplifies integration into circuit boards and assemblies.

Key dimensions include a length of 39.37 mm, width of 26.67 mm, and height of 20.7 mm. The product is manufactured in Mexico and has a 3-pin configuration that aligns with standard transistor sockets for easy replacement and design flexibility.

Supports maximum DC collector current of 40 amperes. Capable of withstanding collector-emitter voltage up to 100 volts DC. Maximum power dissipation rating of 160 watts ensures robust performance. Configured as a single NPN transistor with 3 pins in a TO-204 package.

Operates reliably across a temperature range from -65°C to 200°C. Minimum DC current gain (hFE) of 100 provides efficient amplification. Designed for through hole mounting suitable for power amplifier and switching circuits.

Maximum transition frequency of 1 MHz for moderate frequency applications. Manufactured in Mexico with high-quality monolithic construction. Dimensions approximately 39.37 mm length, 26.67 mm width, 20.7 mm height.

This onsemi 2N6284G power transistor is ideal for industrial, manufacturing, power electronics, and electronic devices requiring high current and voltage handling. Browse EnvMart’s semiconductor categories to find compatible components and accessories.

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