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onsemi Bipolar Power Transistor PNP 3 A, 350 V, TO-220 Package MJE5731AG
Specifications
| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 30.02mm |
| Length | 10.53mm |
| Model | MJE5731AG |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | MJE5731A |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -350V |
| Minimum DC Current Gain hFE | 10 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 5V dc |
| Maximum Collector Base Voltage VCBO | 350V dc |
| Maximum Power Dissipation Pd | 40W |
| Maximum DC Collector Current Idc | -3A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 2MHz |
Key Features
- Designed for line operated audio output amplifier and switch mode power supply drivers.
- Supports a maximum DC collector current of -3 A and collector emitter voltage of -350 V.
- Features a TO-220 package with through hole mount type for easy PCB installation.
- Has a maximum power dissipation of 40 W and operates up to 150°C.
- Includes a minimum DC current gain (hFE) of 10 and maximum transition frequency of 2 MHz.
- Pin count is 3 with transistor polarity PNP and single transistor configuration.
- Suitable for applications requiring robust power transistors with high voltage and current ratings.
Product Description
onsemi MJE5731AG is a high-performance Bipolar Power Transistor featuring a PNP polarity with a maximum DC collector current of 3 A and maximum collector emitter voltage of 350 V. Housed in a popular TO-220 plastic package with 3 pins, it is designed for through-hole mounting which facilitates ease of PCB assembly.
This transistor is ideal for line operated audio output amplifier circuits, switch mode power supply drivers, and other demanding switching applications that require reliable high power performance.
The device supports a maximum power dissipation of 40 W allowing it to handle significant power loads without degradation. It operates safely within a temperature range from -65°C to 150°C, making it suitable for rugged industrial and commercial environments.
Key electrical characteristics include a minimum DC current gain (hFE) of 10 and maximum transition frequency of 2 MHz, supporting fast switching and efficient amplification in implementations.
Physical dimensions are 30.02 mm in height, 10.53 mm in length, and 4.83 mm in width, making it compatible with standard industrial assemblies. The transistor is a single configuration type with PNP polarity, and the product complies with general industrial standards without any special automotive certifications.
Designed for high power audio and switching applications. Robust electrical and thermal specifications for industrial use. Reliable through hole TO-220 package. High voltage withstand and collector current capacity. Wide operating temperature range suitable for demanding environments.
Minimum DC current gain ensures amplification capability. Compact dimensions compatible with common PCB layouts.
This onsemi transistor is manufactured in China and supplied in tubes for bulk handling. It belongs to the MJE5731A series, known for durable and efficient performance in discrete semiconductor applications.
Discover a broad range of Power Transistors and discrete semiconductors on EnvMart. Explore products from top brands like onsemi to find reliable components suited for electronic design, industrial control, and power management applications.
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Frequently Asked Questions
The maximum DC collector current for this model is -3 A.
The maximum collector-emitter voltage (Vceo) for this transistor is -350 V.
It has a maximum power dissipation rating of 40 W.
This transistor measures 30.02 mm in height, 10.53 mm in length, and 4.83 mm in width.
It is housed in a TO-220 package, designed for through-hole mounting.
The minimum DC current gain (hFE) is 10.
The maximum transition frequency for this transistor is 2 MHz.
It operates within a temperature range of -65°C to 150°C.
This model features a pin count of 3.
It is designed for line operated audio output amplifier circuits and switch mode power supply drivers.
This transistor is manufactured in China.
It has a single transistor configuration with PNP polarity.
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