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onsemi Automotive Power N-Channel Enhancement Mode MOSFET 200 mA 50 V SOT-23 BVSS138LT1G

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin China
Brand onsemi
Height 1.01mm
Length 3.04mm
Model BVSS138LT1G
Width 1.4mm
Mount Type Surface
Series BVSS13L
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 200mA
Maximum Drain Source Voltage Vds 50V
Maximum Drain Source Resistance Rds 10Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 225mW
Maximum Gate Source Voltage Vgs 20V
Low Threshold Voltage (VGS(th) 0.5 V-1.5 V)

Key Features

  • This MOSFET operates with a maximum drain-source voltage of 50 V.
  • It supports a continuous drain current of 200 mA.
  • Designed with an enhancement channel mode suitable for automotive low power switching.
  • Compact 3-pin SOT-23 surface mount package minimizes board space usage.
  • Low gate threshold voltage between 0.5 V and 1.5 V for easy logic level drive.
  • Maximum drain-source resistance of 10 ohms ensures efficient switching.
  • Max power dissipation rating of 225 mW supports low power applications.
  • Wide ambient operating temperature range from -55°C to 150°C.

Product Description

onsemi BVSS138LT1G is a 3-pin N-Channel Power MOSFET in a SOT-23 package designed for automotive and low power electronics applications. It complies with the automotive standard AEC-Q101, ensuring reliability in harsh operating environments. The device offers a maximum drain-source voltage of 50 V and can handle a continuous drain current of 200 mA, ideal for switching low current loads effectively.

The device operates in enhancement mode with a low gate threshold voltage ranging from 0.5 V to 1.5 V, facilitating easy drive from logic-level signals. The low drain-source on-resistance of 10 Ω minimizes power loss during operation. It has a maximum power dissipation rating of 225 mW, making it suitable for compact and efficient system designs.

The small footprint of the SOT-23 surface mount package helps save board space, critical in automotive infotainment, body control modules (BCM), and security systems. This MOSFET is Pb-free and PPAP capable, ensuring compliance with automotive environmental standards. Its wide operating temperature range from -55°C to 150°C supports diverse applications in automotive and industrial environments.

Applications include low power switching, digital switching, infotainment systems, body control modules, key fobs, automotive gateways, HVAC controls, and security devices. The compact size, automotive-grade qualification, and performance features make it a reliable choice for modern automotive electronic designs.

This MOSFET operates with a maximum drain-source voltage of 50 V. It supports a continuous drain current of 200 mA. Designed with an enhancement channel mode suitable for automotive low power switching. Compact 3-pin SOT-23 surface mount package minimizes board space usage.

Low gate threshold voltage between 0.5 V and 1.5 V for easy logic level drive. Maximum drain-source resistance of 10 ohms ensures efficient switching. Max power dissipation rating of 225 mW supports low power applications.

Wide ambient operating temperature range from -55°C to 150°C. Ideal for digital switches, infotainment systems, body control modules, and security systems. Pb-free and suitable for automotive applications with PPAP capability.

Explore more on MOSFETs and automotive power semiconductors at EnvMart for reliable and high-performance electronic components.

onsemi Automotive Power N-Channel Enhancement Mode MOSFET 200 mA 50 V SOT-23 BVSS138LT1G
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Frequently Asked Questions

The maximum drain-source voltage of this MOSFET is 50 V.

It supports a continuous drain current of 200 mA.

This model comes in a SOT-23 package with dimensions of 3.04 mm in length, 1.4 mm in width, and 1.01 mm in height.

The gate threshold voltage ranges from 0.5 V to 1.5 V, allowing for easy logic level drive.

The maximum power dissipation rating is 225 mW, suitable for low power applications.

The maximum drain-source resistance is 10 ohms, which ensures efficient switching.

It has an operating temperature range from -55°C to 150°C.

This MOSFET complies with the automotive standard AEC-Q101, ensuring reliability in automotive applications.

This model has a total of 3 pins.

The channel type of this MOSFET is N-channel, designed for enhancement mode operation.

It is suitable for applications such as low power switching, digital switching, infotainment systems, and body control modules.

This MOSFET is designed for surface mounting.

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