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onsemi N-Channel MOSFET, 2.2 A, 60 V Enhancement Mode, 3-Pin SOT-23 Package NVR5198NLT1G
Specifications
| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 1.01mm |
| Length | 3.04mm |
| Model | NVR5198NLT1G |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | NVR5198NL |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 2.2A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 205mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.5W |
| Typical Gate Charge Qg @ Vgs | 5.1nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- This automotive-grade power MOSFET features a compact 3.04 x 1.4 x 1.01 mm SOT-23 package for space-efficient PCB designs.
- The device operates with a maximum power dissipation of 1.5 watts, suitable for efficient load switching.
- It has a low drain-source resistance of 205 milliohms to minimize conduction losses.
- The MOSFET supports an operating temperature range from -55°C to 150°C for reliable performance in harsh environments.
- The gate charge is 5.1 nanocoulombs, enabling fast switching speeds in various applications.
- With a maximum gate-source voltage rating of 20 volts and forward voltage of 1.2 volts, it is designed for robust control.
- This enhancement mode N-type MOSFET is ideal for automotive and industrial electronic component applications.
Product Description
onsemi NVR5198NLT1G is an automotive power MOSFET designed for efficient and reliable switching in demanding environments. This N-Channel device features a maximum continuous drain current of 2.2 A and a drain-source voltage rating of 60 V.
Housed in a compact 3-pin SOT-23 surface mount package measuring 3.04 mm length, 1.4 mm width, and 1.01 mm height, it suits high-density PCB layouts. The low on-resistance of 205 milliohms ensures minimal conduction loss and improved power efficiency.
Operating safely over a temperature range of -55°C up to 150°C, the device is compliant with the automotive AEC-Q101 standard, confirming its ruggedness. Gate characteristics include a typical charge of 5.1 nC at Vgs and a maximum gate-source voltage of 20 V, providing fast and stable switching behavior.
Applications for this power MOSFET include Li-ion cell balancing and load switching in automotive electronics and industrial equipment. This automotive-grade power MOSFET features a compact 3.04 x 1.4 x 1.01 mm SOT-23 package for space-efficient PCB designs.
The device operates with a maximum power dissipation of 1.5 watts, suitable for efficient load switching. It has a low drain-source resistance of 205 milliohms to minimize conduction losses. The MOSFET supports an operating temperature range from -55°C to 150°C for reliable performance in harsh environments.
The gate charge is 5.1 nanocoulombs, enabling fast switching speeds in various applications. With a maximum gate-source voltage rating of 20 volts and forward voltage of 1.2 volts, it is designed for robust control. This enhancement mode N-type MOSFET is ideal for automotive and industrial electronic component applications.
The device is manufactured in China and meets automotive standard AEC-Q101 requirements. Explore more automotive and industrial semiconductor components with reliable performance and industry certifications on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2.2 A.
This MOSFET has a maximum drain-source voltage rating of 60 V.
It is housed in a SOT-23 package with dimensions of 3.04 mm in length, 1.4 mm in width, and 1.01 mm in height.
The device supports an operating temperature range from -55°C to 150°C.
The maximum power dissipation for this MOSFET is 1.5 watts.
The typical gate charge is 5.1 nanocoulombs at the specified gate-source voltage.
The maximum gate-source voltage rating for this model is 20 V.
It features a low drain-source resistance of 205 milliohms, which helps minimize conduction losses.
This model complies with the automotive AEC-Q101 standard, confirming its ruggedness for automotive applications.
It is suitable for applications such as Li-ion cell balancing and load switching in automotive electronics and industrial equipment.
This MOSFET has a pin count of 3.
This model features an N-channel type with enhancement mode characteristics.
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