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Infineon N-Channel IGBT Module 45 A 1200 V 22-Pin EASY1B Clamp FS25R12W1T4B11BOMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 12mm |
| Length | 48mm |
| Model | FS25R12W1T4B11BOMA1 |
| Width | 33.8mm |
| Mount Type | Clamp |
| Maximum Operating Temperature | 150°C |
| Package Type | EASY1B |
| Minimum Operating Temperature | -40°C |
| Pin Count | 22 |
| Maximum Continuous Collector Current Ic | 45A |
| Maximum Collector Emitter Voltage Vceo | 1200V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.25V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 205W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
| Package styles include | 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4 |
Key Features
- Features EASY1B package with a clamp mount type.
- Equipped with 22 pins for easy integration.
- Supports high switching speeds up to 1 MHz suitable for fast switching applications.
- Operates within a temperature range of -40°C to 150°C.
- Maximum power dissipation of 205 W ensuring efficient thermal management.
- Designed with a maximum gate emitter voltage of 20 V.
- Compact dimensions of 48mm length, 33.8mm width, and 12mm height.
- Low maximum collector emitter saturation voltage of 2.25 V for minimal energy loss.
Product Description
Infineon FS25R12W1T4B11BOMA1 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) Module designed for industrial, automotive, and commercial power electronics applications. Rated for a maximum continuous collector current of 45 A and a collector emitter voltage of 1200 V, this module combines efficient power handling with reliable switching characteristics.
The module features a compact EASY1B package and a clamp mount, facilitating straightforward installation and integration into various systems. With a pin count of 22, it supports complex circuitry connections for advanced control.
Engineered for high switching speeds up to 1 MHz, the FS25R12W1T4B11BOMA1 IGBT module is suitable for applications including inverters, uninterruptible power supplies (UPS), motor drives, and industrial automation systems. It supports operating temperatures from -40°C up to 150°C, ensuring robust performance in demanding environments.
It offers a maximum power dissipation of 205 W and a minimal collector emitter saturation voltage of 2.25 V, enhancing energy efficiency and thermal management within power circuits. The maximum gate emitter voltage rating of 20 V ensures safe gate control under various operating conditions.
The module dimensions - 48 mm length, 33.8 mm width, and 12 mm height - make it compact for space-constrained designs. While it does not conform to any automotive standards, its robust build suits diverse power electronics projects.
Features EASY1B package with clamp type mount for secure installation. High switching speed capability supports up to 1 MHz operation. Wide operating temperature range (-40°C to 150°C) for versatility. Low saturation voltage reduces power loss.
Compact form factor allows integration in limited space. Designed for industrial and commercial power control applications. 22-pin configuration facilitates complex electronic connections.
This N-Channel IGBT Module is part of Infineon's comprehensive semiconductor product line offering low switching losses and high efficiency for power modules. Suitable for use in industrial drives, renewable energy inverters, power supplies, and other high power applications, it integrates advanced trench stop and field stop technologies.
Explore further IGBT Modules and semiconductor components at EnvMart to find compatible parts for your electronic system designs.
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Frequently Asked Questions
The maximum continuous collector current for this module is 45 A.
This IGBT module has a maximum collector emitter voltage rating of 1200 V.
The maximum power dissipation is rated at 205 W, which helps in efficient thermal management.
It operates within a temperature range of -40°C to 150°C.
This model features a 22-pin configuration for easy integration into various systems.
It utilizes a clamp mount type, which facilitates secure installation.
The maximum gate emitter voltage rating is 20 V, ensuring safe operation under various conditions.
The maximum collector emitter saturation voltage is 2.25 V, which minimizes energy loss during operation.
The dimensions are 48 mm in length, 33.8 mm in width, and 12 mm in height.
It features an EASY1B package type, designed for compact integration.
This module supports high switching speeds up to 1 MHz, making it suitable for fast switching applications.
It is suitable for applications including inverters, uninterruptible power supplies (UPS), motor drives, and industrial automation systems.
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