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Infineon N-Channel IGBT Module 28 A 1200 V 23-Pin EASY1B Clamp FP15R12W1T4B3BOMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 12mm |
| Length | 48mm |
| Model | FP15R12W1T4B3BOMA1 |
| Width | 33.8mm |
| Mount Type | Clamp |
| Maximum Operating Temperature | 150°C |
| Package Type | EASY1B |
| Minimum Operating Temperature | -40°C |
| Pin Count | 23 |
| Maximum Continuous Collector Current Ic | 28A |
| Maximum Collector Emitter Voltage Vceo | 1200V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.25V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 130W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
| Package styles include | 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4 |
Key Features
- The module supports a maximum continuous collector current of 28 A.
- Collector-emitter voltage rating is 1200 V for reliable industrial performance.
- Maximum power dissipation is 130 W for efficient thermal management.
- Package type is EASY1B with clamp mounting for secure installation.
- Operates within a temperature range of -40°C to 150°C.
- Contains 23 pins compatible with standard configuration.
- Designed for fast switching speeds up to 1 MHz for high-frequency applications.
- Maximum gate emitter voltage rating is 20 V ensuring device protection.
Product Description
Infineon FP15R12W1T4B3BOMA1 is a robust N-Channel IGBT Module designed for efficient power switching applications in industrial, commercial, and automotive sectors. With a maximum continuous collector current rating of 28 A and a collector-emitter voltage of 1200 V, this module provides reliable performance for power electronics circuits.
Packaged in an EASY1B style with a clamp mount, it ensures stable mechanical and electrical connections within complex assemblies. Its compact size, measuring 48 mm in length, 33.8 mm in width, and 12 mm in height, allows it to fit easily into various electronic modules. The device supports high-frequency switching up to 1 MHz and a maximum power dissipation of 130 W making it suitable for inverters, UPS systems, and industrial drive applications.
Operating temperatures range from -40°C to 150°C, providing resilience in demanding environments. The maximum gate emitter voltage is 20 V, ensuring safe gate operation, while maximum collector-emitter saturation voltage is 2.25 V for efficient conduction.
This IGBT module does not carry any specific automotive certifications but is versatile enough for a broad range of power and electronic control applications. It belongs to the family of TRENCHSTOP™ and Fieldstop IGBT modules known for low switching losses in hard and soft switching scenarios.
Maximum continuous collector current of 28 A. Rated for collector-emitter voltage of 1200 V. Power dissipation capability up to 130 W. EasyPACK 1B clamp package type. High switching frequency support up to 1 MHz. Wide operating temperature range from -40°C to 150°C.
Compact dimensions: 48 × 33.8 × 12 mm. 23-pin configuration for standard connectivity. Maximum gate-emitter voltage rating of 20 V. Suitable for industrial, commercial, and power control uses.
This module is ideal for use in industrial drives, UPS systems, inverters, and commercial power electronics. It combines the advantages of MOSFET gate-drive simplicity with bipolar transistor conduction efficiency in a single device. The clamp mount and standard pin count facilitate easy integration with existing electronic assemblies.
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Frequently Asked Questions
The maximum continuous collector current for this IGBT module is 28 A.
The collector-emitter voltage rating is 1200 V, ensuring reliable performance in power electronics applications.
It has a maximum power dissipation capability of 130 W, which aids in efficient thermal management.
This IGBT module operates within a temperature range of -40°C to 150°C, making it suitable for demanding environments.
The module features a 23-pin configuration, compatible with standard connectivity requirements.
It is packaged in an EASY1B style with a clamp mount for secure installation.
The maximum gate-emitter voltage rating is 20 V, ensuring safe operation of the device.
The dimensions of this IGBT module are 48 mm in length, 33.8 mm in width, and 12 mm in height.
It supports high-frequency switching speeds of up to 1 MHz, suitable for various applications.
This module is typically used in industrial drives, UPS systems, and inverters, among other power electronics applications.
The maximum collector-emitter saturation voltage is 2.25 V, which contributes to efficient conduction.
This module uses an N-channel configuration, which is common in power switching applications.
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