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Infineon N-Channel IGBT Module 75 A 1.2 kV 35-Pin ECONO3 Through Hole FS75R12KE3GBOSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 17mm |
| Length | 122mm |
| Model | FS75R12KE3GBOSA1 |
| Width | 62mm |
| Mount Type | Through Hole |
| Series | FS75R12KE3G |
| Maximum Operating Temperature | 125°C |
| Package Type | ECONO3 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 35 |
| Maximum Continuous Collector Current Ic | 75A |
| Maximum Collector Emitter Voltage Vceo | 1.2kV |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.15V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 355W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
| Package styles include | 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4 |
| Number of Transistors | 6 |
Key Features
- This IGBT Module features a 35-pin ECONO3 package with through hole mounting style.
- Maximum continuous collector current is 75 amperes ensuring strong load handling.
- The module supports maximum collector emitter voltage of 1.2 kilovolts for high voltage applications.
- Switching speed is rated at 1 MHz suitable for fast industrial switching tasks.
- Operating temperature range spans from -40°C to 125°C for robust industrial environments.
- Compact size includes dimensions 122mm length, 62mm width, and 17mm height.
- Module incorporates 6 transistors optimized for low switching losses up to 60 kHz frequencies.
- Suitable for use in industrial drives, UPS, inverters, and commercial vehicle power modules.
Product Description
Infineon FS75R12KE3GBOSA1 N-Channel IGBT Module with 75 ampere current rating and 1.2 kilovolt collector emitter voltage, supplied in a 35-pin ECONO3 through hole package, designed for efficient power semiconductor switching applications.
This module features six high-performance transistors optimized for fast switching speeds up to 1 MHz and power dissipation capability of 355 watts, making it ideal for industrial, commercial, and automotive power electronics systems.
The compact dimensions of 122 mm length, 62 mm width, and 17 mm height ensure space-saving integration. Operating temperature from -40°C to 125°C allows reliable performance in harsh environments.
Its robust design supports low saturation voltage of 2.15 V and maximum gate emitter voltage of 20 V, enhancing efficiency and longevity in inverter circuits, UPS units, industrial drives, and power control modules.
This ECONO3 package type module with through hole mount technique ensures strong mechanical bonding and easy mounting on power boards. This IGBT Module features a 35-pin ECONO3 package with through hole mounting style. Maximum continuous collector current is 75 amperes ensuring strong load handling.
The module supports maximum collector emitter voltage of 1.2 kilovolts for high voltage applications. Switching speed is rated at 1 MHz suitable for fast industrial switching tasks. Operating temperature range spans from -40°C to 125°C for robust industrial environments.
Compact size includes dimensions 122mm length, 62mm width, and 17mm height. Module incorporates 6 transistors optimized for low switching losses up to 60 kHz frequencies. Suitable for use in industrial drives, UPS, inverters, and commercial vehicle power modules.
Maximum power dissipation is 355 watts to handle demanding power requirements efficiently. Designed for hard and soft switching applications with reliable saturation voltage and gate emitter voltage ratings.
The Infineon FS75R12KE3GBOSA1 IGBT Module is commonly found in industrial automation, renewable energy converters, electric motor drives, and power supply systems, providing a balance of high efficiency, reliability, and switching performance.
Explore more industrial semiconductor modules on EnvMart to find compatible and complementary power devices for your specific application needs.
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Frequently Asked Questions
The maximum continuous collector current for this IGBT module is 75 amperes.
This model supports a maximum collector emitter voltage of 1.2 kilovolts.
The switching speed is rated at 1 MHz, making it suitable for fast industrial switching tasks.
The dimensions of this IGBT module are 122 mm in length, 62 mm in width, and 17 mm in height.
The operating temperature range for this unit spans from -40°C to 125°C.
This IGBT module incorporates six transistors optimized for low switching losses.
The maximum power dissipation capability of this model is 355 watts.
This IGBT module uses a through hole mounting style.
The maximum gate emitter voltage for this model is 20 volts.
This module is suitable for use in industrial drives, UPS, inverters, and commercial vehicle power modules.
This IGBT module features a 35-pin ECONO3 package type.
The maximum collector emitter saturation voltage of this IGBT module is 2.15 volts.
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