Infineon HEXFET N-Channel MOSFET, 17 A, 100 V, Enhancement Mode, 3-Pin TO-263 IRF530NSTRLPBF

Infineon IRF530NSTRLPBF is a HEXFET N-Channel MOSFET engineered for high-efficiency power switching applications. This discrete semiconductor features a maximum continuous drain current of 17 A and a drain-source voltage rating of 100 V, constructed in a compact TO-263 package with three pins suitable for surface mounting.

The enhancement mode channel ensures efficient device operation, reducing conduction losses and improving overall system performance. With a low maximum drain-source resistance of 90 milliohms, this MOSFET minimizes power dissipation and supports up to 70 watts of power handling capability.

Designed to operate in challenging conditions, it withstands temperatures from -55°C to a maximum of 175°C, making it suitable for industrial, automotive, and electronic power management applications. The gate charge of 37 nC facilitates rapid switching, while a gate-source voltage tolerance range of -20 V to +20 V enhances the transistor’s reliability.

High continuous drain current of 17 A ensures robust performance. 100 V maximum drain-source voltage rating supports demanding voltage applications. TO-263 package type is optimized for surface mount on PCBs. Low on-resistance reduces energy loss during conduction.

Wide operating temperature range for industrial and automotive environments. Efficient gate charge and voltage tolerance for fast switching and durability.

This MOSFET is ideal for designers and engineers seeking high-quality power transistors for use in power management, industrial automation, electronic circuit design, and automotive electronics. Its surface mount form factor aids in compact PCB layouts and enhanced thermal management.

Choose the Infineon IRF530NSTRLPBF for reliable performance in semiconductor applications requiring a robust N-Channel MOSFET solution with superior thermal and electrical characteristics.

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