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Infineon HEXFET N-Channel Power MOSFET 75 A 75 V Enhancement Mode 3-Pin TO-263 IRF2807ZSTRLPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | IRF2807ZSTRLPBF |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 75A |
| Maximum Drain Source Voltage Vds | 75V |
| Maximum Drain Source Resistance Rds | 9.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 300W |
| Typical Gate Charge Qg @ Vgs | 71nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
| N-Channel MOSFET, 89 A, 75 V, 3-Pin D2PAK Infineon IRF2807ZSPBFBrand | Infineon |
Key Features
- This MOSFET features low on-resistance of 9.4 milliohm for reduced power dissipation.
- The device operates up to a maximum temperature of 175°C ensuring thermal stability.
- Designed with enhancement mode and surface mount TO-263 package for space saving.
- Supports maximum gate-source voltage of ±20 V for flexible control signals.
- Typical gate charge is 71 nC which facilitates fast switching speed.
- Power dissipation capability of up to 300 W for high-performance applications.
- Suitable for power supplies, motor control, DC-DC converters, and high-frequency switching.
- Robust construction ensures reliable operation in automotive and industrial systems.
Product Description
Infineon IRF2807ZSTRLPBF is a HEXFET N-Channel Power MOSFET designed for high-performance switching applications, delivering continuous drain current up to 75 A and a drain-source voltage rating of 75 V. The enhancement mode operation combined with the low Rds(on) of 9.4 mΩ significantly minimizes energy loss during conduction, making it ideal for efficient power management.
Housed in a compact 3-pin TO-263 surface mount package, this MOSFET supports a maximum power dissipation of 300 W and maintains operation stability up to 175°C, ensuring robust performance even in harsh industrial or automotive environments. The maximum gate-source voltage ±20 V and typical gate charge of 71 nC enable fast switching speeds and adaptability to various control signal conditions.
This device is extensively used in power supply circuits for optimized energy conversion, motor control in automotive and industrial systems, DC-DC converters, and high-frequency switching applications. Its low forward voltage of 1.3 V enhances switching efficiency further, reducing heat generation and improving system reliability.
The MOSFET is compatible with surface mount technology designed for compact PCB layouts while providing excellent thermal characteristics. Its reliable operation at low temperatures (-55°C) up to elevated temperature ranges (+175°C) adds to its versatility across various commercial and industrial electronics.
Low on-resistance reduces power loss. High maximum power dissipation supports demanding applications. Enhancement mode operation improves control and efficiency. Designed for surface mount technology saves PCB space. High temperature tolerance ensures operational stability.
Quick switching facilitates high-frequency electronic circuits. Ideal for automotive, industrial, and power supply systems.
This MOSFET plays a critical role in enhancing industrial and HVAC power management, manufacturing automation, and energy-efficient systems. Explore the Power MOSFET category for more advanced semiconductor components.
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Frequently Asked Questions
The maximum continuous drain current of this model is 75 A.
This MOSFET has a maximum drain-source voltage rating of 75 V.
It features a low on-resistance of 9.4 mΩ, which helps reduce power dissipation.
The typical gate charge is 71 nC, facilitating fast switching speeds.
This MOSFET can handle a maximum power dissipation of up to 300 W.
The dimensions of the TO-263 package are 10.67 mm in length, 9.65 mm in width, and 4.83 mm in height.
It operates within a temperature range of -55°C to 175°C.
This model is designed for surface mount technology.
The maximum gate-source voltage supported is ±20 V.
It is suitable for power supplies, motor control, DC-DC converters, and high-frequency switching applications.
This model features an N-channel configuration with enhancement mode operation.
The forward voltage is 1.3 V, which enhances switching efficiency.
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