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STMicroelectronics MDmesh M2 N-Channel Power MOSFET, 22 A, 650 V, Enhancement Mode, 3-Pin TO-220 STP28N60M2
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 15.75mm |
| Length | 10.4mm |
| Model | STP28N60M2 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh M2 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 22A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 150mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 170W |
| Typical Gate Charge Qg @ Vgs | 36nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.5V |
Key Features
- This MOSFET features a maximum continuous drain current of 22 A.
- It supports a maximum drain-source voltage of 650 V suitable for high-voltage circuits.
- The device is packaged in a 3-pin TO-220 package for easy mounting through holes.
- Low gate charge of 36 nC ensures fast switching performance with low losses.
- The maximum power dissipation rating is 170 W, allowing it to handle significant power loads.
- Operating temperature range spans from -55°C to 150°C for rugged industrial use.
- Channel mode is enhancement type with a maximum drain-source resistance of 150 milliohms.
- Designed for use in resonant-type switching supplies like LLC converters.
Product Description
STMicroelectronics STP28N60M2 is a high-voltage MDmesh™ M2 series N-Channel Power MOSFET designed for efficient power switching with enhanced performance and reliability.
This device supports a maximum continuous drain current of 22 A and a maximum drain-source voltage of 650 V, making it suitable for demanding industrial and electronic power supply applications.
Packaged in a 3-pin TO-220 housing with through-hole mounting, the MOSFET ensures easy installation and effective thermal management with a maximum power dissipation of 170 W. Featuring a low typical gate charge of 36 nC and an enhancement channel mode, it delivers fast switching and low losses, ideal for resonant converters such as LLC power supplies.
The temperature operating range from -55°C up to 150°C demonstrates its robustness for harsh operating environments in manufacturing, industrial automation, and power management systems.
Maximum continuous drain current of 22 A ensures reliable current handling. 650 V maximum drain-source voltage supports high-voltage environments. 3-pin TO-220 package enables convenient through-hole mounting. Low gate charge contributes to efficient switching.
Power dissipation rated at 170 W allows for heavy-duty applications. Wide operating temperature range enhances versatility. Enhancement channel mode with 150 milliohm drain-source resistance improves switching efficiency.
Typical forward voltage of 1.5 V reduces conduction losses. Designed specifically for industrial and power electronics applications such as resonant-type switching power supplies.
This STMicroelectronics MDmesh M2 series MOSFET is valuable for engineers and designers seeking dependable discrete power transistors for industrial automation, manufacturing equipment, HVAC systems, and other commercial electronics.
EnvMart offers this high-quality component with guaranteed new condition and authentic STMicroelectronics manufacturing standards.
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Frequently Asked Questions
The maximum continuous drain current for this model is 22 A.
It supports a maximum drain-source voltage of 650 V, making it suitable for high-voltage applications.
This device is packaged in a 3-pin TO-220 package, allowing for easy through-hole mounting.
The maximum power dissipation rating is 170 W, enabling it to handle significant power loads.
The operating temperature range spans from -55°C to 150°C, suitable for rugged industrial use.
The typical gate charge is 36 nC, which contributes to fast switching performance with low losses.
The channel mode is enhancement type, which is designed for efficient power switching.
The maximum drain-source resistance is 150 milliohms, improving switching efficiency.
The typical forward voltage is 1.5 V, which helps reduce conduction losses.
It is designed specifically for industrial and power electronics applications, such as resonant-type switching power supplies.
The dimensions are 15.75 mm in height, 10.4 mm in length, and 4.6 mm in width.
The maximum gate-source voltage is -25 V to +25 V.
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