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Infineon OptiMOS N-Channel MOSFET 190mA 100V Enhancement 3-Pin SOT-23 BSS123NH6327XTSA1

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Infineon OptiMOS N-Channel MOSFET 190mA 100V Enhancement 3-Pin SOT-23 BSS123NH6327XTSA1

Name: Infineon OptiMOS N-Channel MOSFET 190mA 100V Enhancement 3-Pin SOT-23 BSS123NH6327XTSA1
Brand: Infineon
SKU: 251542
Price: 0.08 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	1mm
Length	2.9mm
Model	BSS123NH6327XTSA1
Width	1.3mm
Mount Type	Surface
Series	OptiMOS
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	190mA
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	10Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	500mW
Typical Gate Charge Qg @ Vgs	0.6nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	800mV
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Key Features

This MOSFET supports a maximum continuous drain current of 190mA.
The drain-source voltage rating is 100V for high-voltage switching capability.
It features a low maximum drain-source resistance of 10Ω to simplify current limiting.
The device operates from a minimum temperature of -55°C up to a maximum of 150°C.
The typical gate charge is 0.6nC, minimizing switching losses.
The package is a 3-pin SOT-23 surface mount type, suitable for PCB assembly.
The maximum power dissipation is 500mW requiring adequate thermal management.
The device complies with automotive standard AEC-Q101 ensuring reliable operation in automotive environments.

Product Description

Infineon BSS123NH6327XTSA1 OptiMOS N-Channel MOSFET is a surface-mount enhancement transistor designed for switching and control tasks in compact electronic assemblies with a 190mA continuous drain current and 100V maximum drain-source voltage.

This MOSFET features low on-resistance (10Ω max) and very low typical gate charge (0.6nC) to improve efficiency in low-power applications. It is constructed for use over a wide temperature range from -55°C to 150°C, making it suitable for harsh environments including automotive and industrial applications.

Supplied in a 3-pin SOT-23 package, the device is optimized for automated PCB assembly in compact layouts. The power dissipation rating of 500mW requires appropriate copper area or thermal vias on PCB designs to maintain thermal stability and device reliability.

Its compliance with the AEC-Q101 automotive standard makes this MOSFET a robust choice for battery management sensing circuits, low-current load switching in control modules, level-shift interfaces, signal isolation in automotive peripherals, and thermal-limited power distribution networks.

Compact SOT-23 3-pin surface mount package. 100V drain-source rating supports high voltage switching. Low maximum on-resistance reduces power losses. Wide operating temperature from -55°C to 150°C. Typical gate charge of 0.6nC reduces switching losses.

Compliance with automotive AEC-Q101 standard for reliability. Supports battery management and automotive peripheral circuits. Requires heat dissipation management with 500mW max power rating. This MOSFET is ideal for industrial and automotive electronics, including mixed-voltage systems and control modules requiring reliable performance in demanding conditions.

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