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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1mm |
| Length | 2.9mm |
| Model | BSS131H6327XTSA1 |
| Width | 1.3mm |
| Mount Type | Surface |
| Series | SIPMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 110mA |
| Maximum Drain Source Voltage Vds | 240V |
| Maximum Drain Source Resistance Rds | 20Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 360mW |
| Typical Gate Charge Qg @ Vgs | 2.1nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 810mV |
Infineon BSS131H6327XTSA1 SIPMOS series MOSFET is a high-voltage N-channel enhancement-mode transistor intended for surface-mount power switching applications. It supports a maximum continuous drain current of 110 mA and a drain-source voltage up to 240 V, making it suitable for low current loads and compact electronics designs requiring reliable high-voltage switches.
The device features a low maximum drain-source on-resistance of 20 Ohms and a typical gate charge of 2.1 nC, which minimizes drive energy requirements and enhances efficiency in power management circuits. With a maximum power dissipation of 360 mW, it accommodates small form-factor thermal budgets.
Designed to operate across a wide temperature range from -55 °C to 150 °C, this MOSFET is ideal for automotive sensor power switching, battery management control circuits, low-current motor driver gates, level shifting, and various protection functions. It is packaged in a compact 3-pin SOT-23 surface-mount format suitable for automated PCB assembly processes.
The component meets the AEC-Q101 automotive standard, ensuring it is qualified for use in automotive systems requiring rigorous semiconductor stress screening. The small dimensions of 2.9 mm length, 1.3 mm width, and 1.0 mm height enable integration into space-constrained designs.
240 V maximum drain-source voltage enables high-voltage switching capabilities. 110 mA continuous drain current supports low current load applications. 20 V maximum gate-source voltage protects against excessive gate stress.
20 Ohm maximum on-resistance reduces power loss and heat. Typical gate charge of 2.1 nC reduces drive power consumption. 360 mW maximum power dissipation allows use in compact thermal budgets. Operating temperature from -55 °C to 150 °C covers harsh environmental conditions.
Compact 3-pin SOT-23 package for efficient surface mounting. Complies with IEC automotive standard AEC-Q101 for reliability.
This MOSFET is centrally utilized in industries such as automotive electronics, industrial control systems, battery management, portable instrumentation, and consumer devices requiring efficient, high-voltage N-channel switches.
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