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Infineon OptiMOS 3 N-Channel MOSFET, 80 A, 80 V Enhancement, 3-Pin TO-263 IPB054N08N3GATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.57mm |
| Length | 10.31mm |
| Model | IPB054N08N3GATMA1 |
| Width | 9.45mm |
| Mount Type | Surface |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 80A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 9.9mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 150W |
| Typical Gate Charge Qg @ Vgs | 52nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1V |
Key Features
- Offers a maximum continuous drain current of 80 A.
- Provides a maximum drain-source voltage of 80 V for durable operation.
- Features a low maximum drain-source resistance of 9.9 milliohms.
- Supports enhancement mode channel operation for efficient switching.
- Capable of dissipating up to 150 W of power safely.
- Operates within a temperature range from -55°C up to 175°C.
- Typical gate charge of 52 nC suitable for fast switching applications.
- Maximum gate-source voltage rating is ±20 V ensuring device protection.
Product Description
The Infineon OptiMOS 3 N-Channel MOSFET model IPB054N08N3GATMA1 is a high efficiency power transistor designed for demanding power management applications. It supports a maximum continuous drain current of 80 amperes and a maximum drain-source voltage of 80 volts, making it suitable for medium voltage power switching tasks. The device is housed in a compact 3-pin TO-263 surface-mount package, providing excellent thermal management and space-saving benefits for high density circuit designs.
This MOSFET features a low on-resistance of 9.9 milliohms which optimizes conduction losses and enhances overall energy efficiency. Its enhancement type N-channel structure enables fast switching characteristics vital for modern DC/DC converters and switching power supplies. Rated to dissipate up to 150 watts, it ensures reliable operation under high power conditions.
Designed to operate in a wide temperature range from -55°C to a maximum of 175°C, the IPB054N08N3GATMA1 is well suited for industrial, automotive, and consumer electronics applications that require robust thermal performance. The typical gate charge of 52 nanocoulombs ensures swift gate control, which is critical for switching speed and efficiency. The maximum gate-source voltage withstands ±20 volts to protect against voltage spikes.
The device is lead-free, aligning with environmentally conscious manufacturing standards. Its small footprint dimensions of 10.31 mm length, 9.45 mm width, and 4.57 mm height make it ideal for compact power modules and embedded electronics.
Maximum continuous drain current of 80 A. Maximum drain-source voltage of 80 V. Maximum drain-source resistance of 9.9 mΩ. Enhancement mode N-channel for fast switching. Maximum power dissipation of 150 W. Operating temperature range of -55°C to 175°C.
Typical gate charge of 52 nC at Vgs. Maximum gate-source voltage of ±20 V. Compact TO-263 surface mount package. Lead-free plating compliant with RoHS.
This MOSFET is well suited for applications in industrial power electronics, automotive electronics, computing power supplies, and other fields requiring high-performance and efficient power switching components. Explore more Infineon discrete semiconductors and MOSFETs for enhanced power management solutions on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of this model is 80 A.
This MOSFET has a maximum drain-source voltage rating of 80 V.
It features a maximum drain-source resistance of 9.9 milliohms.
The device is capable of dissipating up to 150 W of power safely.
It operates within a temperature range from -55°C to 175°C.
This model is housed in a compact 3-pin TO-263 surface-mount package.
The typical gate charge is 52 nanocoulombs (nC).
The maximum gate-source voltage rating is ±20 V.
It utilizes an enhancement mode N-channel structure for efficient switching.
The dimensions are 10.31 mm in length, 9.45 mm in width, and 4.57 mm in height.
This MOSFET is suitable for applications in industrial power electronics, automotive electronics, and computing power supplies.
The country of origin for this model is India.
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