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Infineon OptiMOS N-Channel Enhancement MOSFET 190mA 100V 3-Pin SOT-23 BSS123NH6433XTMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 1mm
Length 2.9mm
Model BSS123NH6433XTMA1
Width 1.3mm
Mount Type Surface
Series OptiMOS
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 190mA
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 10Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 500mW
Typical Gate Charge Qg @ Vgs 0.6nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 800mV

Key Features

  • Features 100V maximum drain-source voltage for high-voltage applications.
  • Supports continuous drain current of 190mA for light-load control.
  • Has 10Ω maximum drain-source resistance enhancing power efficiency.
  • Operates within temperature range from -55°C to 150°C for wide thermal tolerance.
  • Includes automotive-grade AEC-Q101 standard compliance for robust vehicle use.
  • Typical gate charge is 0.6nC which minimizes switching losses.
  • Allows gate-source voltage range from -20V to +20V for versatile drive levels.
  • Compact 3-pin SOT-23 surface mount package suitable for PCB assembly.

Product Description

Infineon BSS123NH6433XTMA1 is a high-quality OptiMOS N-Channel Enhancement MOSFET designed for compact electronic assemblies requiring precise switching control. It supports a maximum continuous drain current of 190mA and a drain-source voltage rating of 100V, making it suitable for various low-current switching applications, including battery management and signal isolation.

This MOSFET features a maximum drain-source resistance (Rds) of 10Ω, which ensures efficient power usage and limits current flow effectively. Its typical gate charge of 0.6nC helps reduce switching losses, improving overall system efficiency. Operating across a wide temperature range from -55°C to 150°C, it can withstand harsh environments including automotive and industrial conditions.

Encased in a compact 3-pin SOT-23 surface-mount package, it allows for streamlined PCB integration and automated assembly processes. It is compliant with automotive standard AEC-Q101, endorsing its suitability for vehicle electronics that demand high reliability and durability.

Applications include battery management sensing circuits, low-current load switching in control modules, mixed-voltage system level-shift interfaces, signal isolation for automotive peripherals, and thermal-limited power distribution networks.

100V maximum drain-source voltage for high-voltage switching capability. 190mA continuous drain current for light-load control. 10Ω maximum drain-source resistance (Rds) for efficient current limiting. Wide operating temperature range from -55°C to 150°C.

AEC-Q101 automotive standard compliance ensuring robust performance. Low typical gate charge of 0.6nC minimizing switching losses. Compatible with gate-source voltages of -20V to +20V. Compact 3-pin SOT-23 surface mount package for easy PCB integration.

This MOSFET is ideal for use in industrial, automotive, and electronic control applications where small form factor and reliable performance are critical. It is well suited for power management, switching regulators, and signal interfaces.

Explore more MOSFET products and components in the Electronics & Electricals category at EnvMart.

Infineon OptiMOS N-Channel Enhancement MOSFET 190mA 100V 3-Pin SOT-23 BSS123NH6433XTMA1
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Frequently Asked Questions

The maximum drain-source voltage for this model is 100V, making it suitable for high-voltage applications.

It supports a continuous drain current of 190mA, which is suitable for light-load control applications.

The maximum drain-source resistance (Rds) is 10Ω, which enhances power efficiency during operation.

This model operates within a temperature range from -55°C to 150°C, allowing it to function in a variety of environments.

The typical gate charge is 0.6nC, which helps minimize switching losses and improve efficiency.

It is encased in a compact 3-pin SOT-23 surface mount package, suitable for PCB assembly.

Yes, it is compliant with the automotive standard AEC-Q101, ensuring robust performance in vehicle applications.

The maximum gate-source voltage is -20V to +20V, providing versatility in drive levels.

The dimensions of this model are 2.9mm in length, 1.3mm in width, and 1mm in height.

It is suitable for applications such as battery management, low-current load switching, and signal isolation for automotive peripherals.

The maximum power dissipation for this MOSFET is 500mW, which is important for thermal management.

This model features an N-channel enhancement type, which is commonly used for switching applications.

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