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Infineon Isolated HEXFET Dual N and P-Channel MOSFET, 4A Continuous Drain Current, 30V Drain Source Voltage IRF7309TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.5mm |
| Length | 5mm |
| Model | IRF7309TRPBF |
| Width | 4mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | Type N, Type P |
| Maximum Continuous Drain Current Id | 4A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 80mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.4W |
| Typical Gate Charge Qg @ Vgs | 16.7nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1V |
| Transistor Configuration | Isolated |
Key Features
- The device features a dual isolated HEXFET design integrating both N-channel and P-channel MOSFETs.
- It supports enhancement mode operation with a maximum drain-source resistance of 80 milliohms.
- Maximum power dissipation is rated at 1.4 Watts with a high operating temperature range from -55°C to 150°C.
- Package dimensions measure 5 mm length, 4 mm width, and 1.5 mm height for surface mount applications.
- The MOSFET supports a maximum gate-source voltage of -20 to +20 Volts ensuring robust switching performance.
- Typical gate charge at Vgs is 16.7 nanocoulombs enabling efficient switching behavior.
- Forward voltage drop is approximately 1 Volt for reliable conduction.
- Designed for high-density circuit boards requiring compact and cost-effective dual MOSFET solutions.
Product Description
Infineon IRF7309TRPBF is a dual N and P-channel power MOSFET device integrating isolated HEXFET transistors suitable for various power switching applications. It offers a maximum continuous drain current of 4 Amperes and a maximum drain-source voltage of 30 Volts, ideal for efficient low-voltage power management.
This MOSFET is housed in a standard 8-pin SOIC surface-mount package with compact dimensions of 5 mm length, 4 mm width, and 1.5 mm height, providing designers with a space-saving solution for high component density circuit boards.
The device operates in enhancement mode with a low drain-source resistance of 80 milliohms, supporting a maximum power dissipation of 1.4 Watts. It features a wide operating temperature range from -55°C to 150°C, suitable for industrial and consumer electronics environments.
The maximum gate-source voltage ranges from -20 Volts to +20 Volts, ensuring reliable switching and control. The typical gate charge at this voltage is 16.7 nanocoulombs, facilitating high-speed switching performance with low losses. A forward voltage of about 1 Volt ensures minimal conduction losses.
This product is not automotive grade and carries no industry standard approvals or certifications. It is designed for applications requiring compact, reliable dual MOSFET power switching components with isolated transistor configuration for enhanced noise immunity.
The dual N/P-channel isolated HEXFET design maximizes circuit efficiency in compact spaces. Low on-resistance supports high current loads with reduced power loss. Wide temperature range enables usage in harsh industrial environments.
Compact SOIC package simplifies assembly in automated surface-mount technology lines. Suitable for power management, signal switching, and amplification applications.
Infineon offers a broad portfolio of MOSFET products including CoolMOS, OptiMOS, and StrongIRFET series, delivering industry-leading performance for power electronics. This device is ideal for industrial, consumer, and embedded system applications requiring robust power switches.
Explore more Infineon MOSFET products on EnvMart for efficient circuit design and reliable power management solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4 Amperes.
This MOSFET supports a maximum drain-source voltage of 30 Volts.
The package dimensions are 5 mm in length, 4 mm in width, and 1.5 mm in height.
The maximum power dissipation for this model is rated at 1.4 Watts.
The typical gate charge at Vgs is 16.7 nanocoulombs.
The maximum gate-source voltage ranges from -20 Volts to +20 Volts.
This model features a dual N-channel and P-channel configuration.
The maximum drain-source resistance is 80 milliohms.
The operating temperature range is from -55°C to 150°C.
This model is designed for surface mount applications.
It is suitable for power management, signal switching, and amplification applications.
The transistor configuration is isolated, integrating both N-channel and P-channel MOSFETs.
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