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Infineon Isolated HEXFET Dual Type P and Type N-Channel MOSFET 3.5 A 25 V Enhancement Mode 8-Pin SOIC IRF7105TRPBF

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Infineon Isolated HEXFET Dual Type P and Type N-Channel MOSFET 3.5 A 25 V Enhancement Mode 8-Pin SOIC IRF7105TRPBF

Name: Infineon Isolated HEXFET Dual Type P and Type N-Channel MOSFET 3.5 A 25 V Enhancement Mode 8-Pin SOIC IRF7105TRPBF
Brand: Infineon
SKU: 251486
Price: 0.34 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	China
Brand	Infineon
Height	1.5mm
Length	5mm
Model	IRF7105TRPBF
Width	4mm
Mount Type	Surface
Series	HEXFET
Maximum Operating Temperature	150°C
Package Type	SOIC
Minimum Operating Temperature	-55°C
Pin Count	8
Number of Elements per Chip	2
Channel Type	Type P, Type N
Maximum Continuous Drain Current Id	3.5A
Maximum Drain Source Voltage Vds	25V
Maximum Drain Source Resistance Rds	400mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	2W
Typical Gate Charge Qg @ Vgs	10nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.2V
Transistor Configuration	Isolated

Key Features

Dual N/P-channel power MOSFETs provide space-saving switching solutions.
Package type is 8-pin SOIC for surface mounting.
Maximum power dissipation is 2 watts for efficient thermal management.
Operating temperature ranges from -55°C to 150°C.
Features low drain-source resistance of 400 milliohms.
Typical gate charge is 10 nanocoulombs at rated gate voltage.
Enhancement mode MOSFET suitable for high density designs.
Forward voltage is typically 1.2 volts.

Product Description

Infineon IRF7105TRPBF is a high-quality isolated HEXFET dual power MOSFET integrating both Type P and Type N channels in a compact 8-pin SOIC surface mount package. Rated for a maximum continuous drain current of 3.5 A and a maximum drain-source voltage of 25 V, this device is designed for enhancement mode operation, providing efficient switching with a low on-resistance of 400 milliohms.

This MOSFET features a forward voltage of approximately 1.2 V and a typical gate charge of 10 nC at the specified gate voltage range (-20 V to +20 V), enabling fast switching and reduced power loss. With a maximum power dissipation rating of 2 W, it supports reliable operation within a broad temperature range of -55°C to +150°C, ensuring suitability for demanding industrial and electronic applications.

The device's compact dimensions of 5 mm in length, 4 mm in width, and 1.5 mm in height allow efficient use of PCB space in high component density designs. The dual transistor configuration combining N and P channel MOSFETs facilitates versatile switching circuits while maintaining isolated electrical paths for enhanced system performance.

Infineon’s HEXFET MOSFET technology offers robust and reliable performance essential for electronic components in power management, industrial automation, consumer electronics, and automotive applications where space-saving and energy efficiency are critical.

Dual N/P-channel power MOSFET for dense PCB layouts. Surface mount 8-pin SOIC packaging supports automated assembly. Low drain-source resistance reduces energy loss. Wide operating temperature supports industrial environments.

Enhancement mode ensures stable switching action.

This Irf7105trpbf model, manufactured in China and supplied new, is compliant with general industry standards albeit without specific certifications. It is ideal for engineers and designers seeking compact, efficient MOSFET solutions for various electronic and power circuit designs.

Explore our semiconductor category at EnvMart for more MOSFET and discrete semiconductor components from Infineon and other leading manufacturers.