Infineon Isolated HEXFET 2 Type P-Channel MOSFET, 2.3 A, 20 V Enhancement, 8-Pin SOIC IRF7104TRPBF

Infineon IRF7104TRPBF is a high-performance isolated HEXFET P-Channel MOSFET designed to deliver reliable switching performance with a maximum continuous drain current of 2.3 A and a drain-source voltage rating of 20 V. Packaged in a compact and durable 8-pin SOIC surface-mount format, this device suits applications requiring efficient power management in tight PCB layouts.

Utilizing enhancement mode channel operation, the transistor provides excellent control characteristics and low on-resistance of 400 mΩ, reducing conduction losses and improving system efficiency. Its robust thermal specifications, operating from -55°C up to 150°C with a power dissipation capacity of 2 W, make it suitable for industrial and commercial electronics requiring reliable thermal endurance.

The device features a minimal gate charge of 9.3 nC at gate voltage, facilitating fast switching speeds and enhancing overall power efficiency. It supports a gate-source voltage range of -12 V to +12 V to protect the MOSFET during driving conditions. The isolated transistor configuration includes 2 elements per chip for improved performance in isolated or float applications.

Incorporating forward voltage characteristics of -1.2 V, this MOSFET is ideal for applications such as power management in consumer electronics, industrial control systems, and embedded circuit designs requiring P-channel switching. Manufactured in China with Infineon’s quality standards, it offers consistent reliability.

This product is suited for use in semiconductor assemblies, discrete semiconductor applications, and electronic device manufacturing. It provides designers with a compact, efficient semiconductor switch component conforming to typical surface mount assembly processes.

Isolated HEXFET technology reduces conduction losses for efficiency. P-Channel enhancement mode MOSFET for versatile switching applications. Compact 8-pin SOIC package ideal for surface mount PCB design. Wide operating temperature range from -55°C to 150°C.

Low on-resistance and minimal gate charge for high efficiency. Maximum power dissipation of 2 W supports thermal robustness. Gate-source voltage limits of ±12 V ensure gate protection. Two elements per chip for enhanced transistor reliability.

Manufactured in China adhering to Infineon production standards. Suitable for industrial, electronic manufacturing and embedded system applications. Explore more semiconductor and MOSFET products from Infineon through EnvMart’s electronics components category for precision and quality.