Infineon OptiMOS P Type P-Channel MOSFET 40 A, 30 V, Enhancement Mode, 8-Pin TSDSON BSZ086P03NS3GATMA1

Infineon BSZ086P03NS3GATMA1 is a P-Type P-Channel OptiMOS MOSFET specifically engineered for use in industrial and commercial power switching applications. This enhancement mode device features a maximum continuous drain current rating of 40 A and a maximum drain-source voltage of 30 V, making it ideal for low-voltage power rails where efficient and high-current switching is critical.

Housed in a compact 8-pin TSDSON surface-mount package, this MOSFET facilitates efficient assembly through automated pick-and-place and reflow soldering techniques. Its low on-resistance (Rds(on)) of 13.4 mΩ significantly minimizes conduction losses, while the device supports a maximum power dissipation of 69 W for effective thermal handling in demanding environments.

The device operates reliably across a wide temperature range from -55°C to 150°C, accommodating harsh industrial temperatures when coupled with suitable thermal management. The typical gate charge of 43.2 nC provides a balance between fast switching performance and manageable gate drive requirements, while a maximum gate-source voltage rating of ±25 V ensures a broad gate-drive margin for robust operation.

Its compact form factor, with a package height of only 1.1 mm and footprint of 3.4 mm by 3.4 mm, enables high-density assembly in space-constrained power modules. This MOSFET is well suited for synchronous buck converters in power supplies, DC motor control and drive circuits, load switching in telecom and server power systems, as well as battery management and distribution circuits.

Featuring surface mount technology and designed for industrial temperature range applications, the Infineon BSZ086P03NS3GATMA1 helps optimize efficiency and thermal performance in a variety of commercial electrical and electronic products.

Supports maximum continuous drain current of 40 A for robust power handling. 30 V maximum drain-source voltage suitable for low-voltage power supplies. Low on-resistance of 13.4 mΩ reduces conduction losses significantly.

Enhancement mode device in an 8-pin TSDSON surface-mount package. Maximum power dissipation of 69 W enables effective thermal management. Operates reliably over a wide temperature range from -55°C to 150°C. Typical gate charge of 43.2 nC balances switching speed and drive requirements.

Maximum gate-source voltage rating of ±25 V ensures robust gate-drive margins. Compact low-profile design with 1.1 mm package height supports space-constrained layouts. Ideal for applications in synchronous buck converters, DC motor control, telecom power systems, and battery management.

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