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Infineon OptiMOS-T2 N-Channel MOSFET 80 A 60 V Enhancement 3-Pin TO-262 IPI80N06S407AKSA2
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 23.45mm |
| Length | 10.2mm |
| Model | IPI80N06S407AKSA2 |
| Width | 4.4mm |
| Mount Type | Through Hole |
| Series | OptiMOS-T2 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-262 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 80A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 7.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 79W |
| Typical Gate Charge Qg @ Vgs | 43nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Maximum continuous drain current of 80 amperes supports high power applications.
- Low maximum drain-source resistance of 7.4 milliohms reduces power losses and improves efficiency.
- Enhanced operation mode for superior switching performance.
- Package designed as TO-262 for through-hole mounting.
- Operating temperature range from -55°C to a maximum of 175°C suits rugged and automotive environments.
- Typical gate charge of 43 nanocoulombs at gate-source voltage 4 V enables fast switching speeds.
- Compliant with AEC-Q101 automotive standard ensuring quality and reliability for automotive uses.
Product Description
Infineon IPI80N06S407AKSA2 is a high-performance OptiMOS-T2 N-Channel MOSFET designed for efficient power management in electronic devices. With a maximum continuous drain current of 80 A and a drain-source voltage rating of 60 V, this MOSFET operates in enhancement mode to deliver reliable and energy-saving performance within a compact, 3-pin TO-262 package.
The device supports a wide operating temperature range from -55°C up to 175°C, making it suitable for demanding industrial, automotive, and power electronics applications where thermal endurance is critical. The low maximum drain-source resistance of 7.4 milliohms contributes to minimal conduction losses, enhancing overall system efficiency.
This MOSFET features a typical gate charge of 43 nC at 4 V, allowing for swift switching essential in voltage regulation and power conversion circuits. Its construction adheres to the stringent AEC-Q101 automotive standard, underlining its robustness and reliability for automotive electronic systems.
OptiMOS-T2 products are part of Infineon's strategy for energy-efficient semiconductor solutions designed to meet the evolving requirements of power density and CO2 reduction in various sectors. The package type TO-262 ensures easy compatibility with through-hole mounting processes and robust soldering capabilities.
Maximum continuous drain current of 80 amperes. Drain-source voltage rating of 60 volts. Low Rds(on) of 7.4 milliohms for energy efficiency. Enhancement mode operation. 3-pin TO-262 package for through hole mounting. Operational temperature range from -55°C to 175°C.
Typical gate charge of 43 nanocoulombs. Maximum gate-source voltage of 20 volts. Forward voltage of 1.3 volts under forward conduction. AEC-Q101 automotive qualification. This Infineon MOSFET is ideal for industrial electronics, automotive power systems, manufacturing equipment, and power conversion in computing appliances.
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Frequently Asked Questions
The maximum continuous drain current for this model is 80 amperes, making it suitable for high power applications.
This MOSFET has a drain-source voltage rating of 60 volts, allowing it to handle significant voltage levels.
The package type of this model is TO-262, designed for through-hole mounting.
It operates within a temperature range from -55°C to a maximum of 175°C, suitable for rugged environments.
The maximum drain-source resistance (Rds(on)) is 7.4 milliohms, which helps reduce power losses.
The typical gate charge at a gate-source voltage of 4 V is 43 nanocoulombs, facilitating fast switching speeds.
It complies with the AEC-Q101 automotive standard, ensuring quality and reliability for automotive applications.
The forward voltage under forward conduction is 1.3 volts, which is relevant for its operational characteristics.
The maximum gate-source voltage is 20 volts, which defines the limits for gate control.
The dimensions are 23.45 mm in height, 10.2 mm in length, and 4.4 mm in width.
The maximum power dissipation is 79 watts, which indicates its capability to handle thermal loads.
This model is suitable for industrial electronics, automotive power systems, and power conversion in computing appliances.
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