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onsemi N-Channel MOSFET 124 A, 100 V Enhancement, 8-Pin PQFN FDMS86181
Specifications
| Country of Origin | Philippines |
|---|---|
| Brand | onsemi |
| Height | 1.05mm |
| Length | 5.85mm |
| Model | FDMS86181 |
| Width | 5mm |
| Mount Type | Surface |
| Series | FDMS86181 |
| Maximum Operating Temperature | 150°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 124A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 12mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 42nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Advanced PowerTrench® process provides low on-state resistance and superior switching capabilities.
- Features shielded gate technology to minimize switching noise and electromagnetic interference.
- Maximum continuous drain current is 124 A ensuring high current capacity.
- Maximum drain-source voltage is rated at 100 V suitable for power applications.
- Maximum power dissipation is 125 W for reliable operation under load conditions.
- Gate charge is low at 42 nC to ensure efficient switching performance.
- Operating temperature range from -55°C to 150°C supports harsh environments.
- Compact PQFN package measuring 5.85 mm length, 5 mm width, and 1.05 mm height allows for surface mounting.
Product Description
onsemi FDMS86181 N-Channel MOSFET is engineered using an advanced PowerTrench® fabrication process incorporating shielded gate technology. This innovative design minimizes on-state resistance and enhances switching performance with a best-in-class soft body diode. The device operates with a maximum continuous drain current of 124 A and a maximum drain-source voltage of 100 V, making it suitable for various power switching applications.
Its enhancement mode channel type and 8-pin PQFN surface mount package provide compactness and ease of integration on PCBs. Maximum power dissipation of 125 W ensures robust performance in demanding conditions. The MOSFET features a low typical gate charge of 42 nC at Vgs facilitating efficient high-speed switching, and a maximum gate-source voltage rating of 20 V ensures safe gate drive margins.
The device supports wide operating temperatures from -55°C to 150°C, allowing reliability in industrial, automotive, and other harsh environments. Its physical dimensions of 5.85 mm length, 5 mm width, and 1.05 mm height make it suitable for compact system designs. The maximum drain-source resistance Rds(on) of 12 mΩ ensures minimized conduction losses to improve overall energy efficiency.
Advanced shielded gate technology reduces switching noise and electromagnetic interference. Low gate charge contributes to lower switching losses and improved efficiency. High current capacity accommodates demanding power switching needs.
Robust operating temperature range supports HVAC, industrial, and automotive applications. Compact PQFN package suitable for surface mount technology assemblies. Designed for general usage across power management and discrete semiconductor applications.
This MOSFET is ideal for electronic components, power and connectors in sectors such as industrial manufacturing, automotive electronics, HVAC systems, and power distribution equipment. The onsemi FDMS86181 combines cutting-edge semiconductor technology with practical design features to meet modern electronic device requirements.
Explore more in the Discrete Semiconductors category for related MOSFET products at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of this model is 124 A, making it suitable for high current applications.
This MOSFET has a maximum drain-source voltage rating of 100 V, which is ideal for various power applications.
The typical gate charge for this unit is 42 nC at Vgs, ensuring efficient switching performance.
The PQFN package measures 5.85 mm in length, 5 mm in width, and 1.05 mm in height, allowing for compact surface mounting.
The maximum power dissipation for this model is 125 W, providing reliable operation under load conditions.
This MOSFET operates within a temperature range of -55°C to 150°C, suitable for harsh environments.
It uses an enhancement mode N-channel, which is designed for efficient power switching applications.
The maximum gate-source voltage rating for this model is 20 V, ensuring safe operation under various conditions.
The maximum drain-source resistance (Rds(on)) is 12 mΩ, which helps minimize conduction losses.
This model is designed for surface mounting, facilitating integration into PCBs.
It is suitable for applications in industrial manufacturing, automotive electronics, HVAC systems, and power distribution equipment.
The country of origin for this MOSFET is the Philippines.
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