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onsemi N-Channel MOSFET 222 A 100 V Enhancement Mode TO-220 Package FDPF2D3N10C
Specifications
| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 16.07mm |
| Length | 10.36mm |
| Model | FDPF2D3N10C |
| Width | 4.9mm |
| Mount Type | Through Hole |
| Series | FDPF |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 222A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 2.3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 45W |
| Typical Gate Charge Qg @ Vgs | 108nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Utilizes advanced PowerTrench® process with Shielded Gate technology for low on-state resistance and high switching performance.
- Features a maximum drain-source resistance of 2.3 mΩ at VGS = 10 V and ID = 222 A.
- Capable of maximum power dissipation of 45 W with operating temperature range from -55°C to 175°C.
- Employs low typical gate charge of 108 nC for reduced switching losses.
- Offers high power density and superior soft body diode performance.
- Designed for applications including server, telecom, motor drives, and power supplies.
- Comes in a through-hole mount TO-220 package with 3 pins for easy PCB integration.
Product Description
The onsemi FDPF2D3N10C N-Channel MOSFET is engineered using ON Semiconductor's advanced PowerTrench® technology featuring Shielded Gate technology, optimized for achieving extremely low on-state resistance while delivering excellent switching performance.
This enhancement mode device supports a maximum continuous drain current of 222 A and a drain-source voltage rating of 100 V, housed in a 3-pin TO-220 package suitable for through-hole mounting.
With a maximum drain-source resistance (Rds(on)) of 2.3 mΩ at a gate-source voltage of 10 V, this MOSFET offers efficient conduction suitable for power management applications. The device can handle power dissipation up to 45 W and operates reliably across a wide temperature range from -55°C to 175°C.
It features a typical gate charge (Qg) of 108 nC which contributes to low switching losses, enhancing overall efficiency.
Its low reverse recovery charge (Qrr) and soft recovery diode performance ensure reduced switching noise and loss, making it ideal for synchronous rectification in ATX power supplies, servers, telecom equipment, motor drives, solar inverters, and uninterruptible power systems.
Advanced PowerTrench® process with Shielded Gate technology minimizes on-state resistance. High current handling capability with 222 A maximum continuous drain current. Robust thermal performance with max operating temperature of 175°C.
Low typical gate charge enhances switching efficiency and reduces losses. Through-hole TO-220 package offers ease of mounting and heat dissipation. Suited for industrial, server, telecom, and power conversion applications.
This MOSFET is manufactured in China and complies with no specific automotive or other standards. Explore more suitable MOSFETs and high-performance semiconductor devices in EnvMart's Electronics & Electricals category for your industrial and commercial needs.
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Frequently Asked Questions
The maximum continuous drain current for the onsemi FDPF2D3N10C is 222 A.
This model has a maximum drain-source voltage rating of 100 V.
The maximum power dissipation for the FDPF2D3N10C is 45 W.
It operates reliably across a temperature range from -55°C to 175°C.
The typical gate charge (Qg) at Vgs is 108 nC.
This device comes in a TO-220 package and is designed for through-hole mounting.
The maximum drain-source resistance (Rds(on)) is 2.3 mΩ at VGS = 10 V.
This MOSFET is suitable for applications including server, telecom, motor drives, and power supplies.
The dimensions of the FDPF2D3N10C are 16.07 mm in height, 10.36 mm in length, and 4.9 mm in width.
The forward voltage (Vf) for this MOSFET is 1.3 V.
This model features an N-channel type.
The maximum gate-source voltage (Vgs) is 20 V.
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