DiodesZetex Isolated 2 N-Channel Power MOSFET, 60 V, 4.4 A, Enhancement Mode, 8-Pin SOIC DMN6066SSD-13

DiodesZetex DMN6066SSD-13 is an isolated dual N-Channel Power MOSFET designed for high efficiency and compactness in power electronic applications. It features a maximum drain-source voltage of 60 V and a continuous drain current capability of 4.4 A, making it suitable for industrial, automotive, and consumer electronics requiring robust switching.

This transistor utilizes enhancement mode channel operation and has a surface mount 8-pin SOIC package type providing ease of automated assembly and reduced PCB footprint. The MOSFET offers a maximum power dissipation of 2.14 W, ensuring efficient thermal management under typical operating loads.

With a wide operational temperature range from -55°C to +150°C, it supports reliable use in varying thermal conditions, including automotive environments. The device complies with rigorous standards like MIL-STD-202 for military, AEC-Q101 for automotive-grade components, UL 94V-0 flammability rating, RoHS environmental compliance, and J-STD-020, underscoring its quality and durability.

The typical gate charge at a gate-source voltage of 5.4 nC enables fast switching speeds which is critical for high-frequency circuits and power conversion systems. Its isolated transistor configuration helps in circuit design where electrical isolation is needed between switching elements.

Dimensions of 5 mm length, 4 mm width, and 1.5 mm height provide a compact footprint suitable for dense circuit layouts. The MOSFET has a maximum drain-source resistance of 97 milliohms to optimize conduction losses.

Features 8-pin SOIC surface mount package for compact PCB integration. Enhancement mode transistor for reliable power switching. Maximum power dissipation of 2.14 W for efficient thermal operation. Wide operating temperature range (-55°C to +150°C) for harsh environments.

Certified to MIL-STD-202, AEC-Q101, UL 94V-0, RoHS, and J-STD-020 standards. Typical gate charge of 5.4 nC ensures fast switching performance. Isolated dual N-Channel design suitable for power management circuits. Low gate-source voltage ratings for flexible device driving.

This MOSFET is ideal for industrial electronics, automotive applications, power management modules, and other semiconductor use cases requiring efficient, reliable power transistors. It supports high speed switching, thermal stability, and compact design needs for modern electronics manufacturing.

Explore DiodesZetex MOSFETs and other power semiconductor devices in the Electronics & Electricals category at EnvMart for guaranteed quality and performance.