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Vishay 30 V 200 mA Small Signal Diode Through Hole DO-35 SD103B-TR

Category Schottky Diodes & Rectifiers Brand Vishay Condition New

Specifications

Country of Origin China
Diameter 1.7mm
Brand Vishay
Height 3.9mm
Length 55.9mm
Model SD103B-TR
Mount Type Through Hole
Maximum Operating Temperature 125°C
Package Type DO-35
Minimum Operating Temperature -55°C
Pin Count 2
Automotive Standard AEC-Q101
Maximum Continuous Forward Current If 200mA
Peak Reverse Repetitive Voltage Vrrm 30V
Diode Configuration Single
Rectifier Type Small Signal
Peak Reverse Current Ir 5μA
Peak Non-Repetitive Forward Surge Current Ifsm 15A
Maximum Forward Voltage Vf 600mV
Peak Reverse Recovery Time trr 10ns

Key Features

  • Metal-on-silicon Schottky barrier diode with PN junction guard ring.
  • Low forward voltage drop of 600 mV ensuring efficient operation.
  • Supports peak forward surge current up to 15 A for transient conditions.
  • Robust package type DO-35 with through hole mount for reliable PCB integration.
  • Operates across a wide temperature range from -55°C to 125°C.
  • Peak reverse current limited to 5 μA for low leakage performance.
  • Fast peak reverse recovery time of 10 ns suitable for high-speed switching.
  • Compliant with automotive standard AEC-Q101 for automotive applications.

Product Description

Vishay SD103B-TR is a metal-on-silicon Schottky barrier small signal diode featuring a protective PN junction guard ring. It supports a maximum continuous forward current of 200 mA and withstands peak reverse repetitive voltage of 30 V, making it suitable for precise electronic applications requiring efficient switching.

The diode's low forward voltage drop of 600 mV contributes to energy efficiency, while the peak forward surge current of 15 A enables operation under transient surges. Its DO-35 through hole package provides sturdy and easy mounting on printed circuit boards.

Operating reliably over a temperature range from -55°C to 125°C, the SD103B-TR diode exhibits minimal leakage current with a peak reverse current of only 5 μA. The fast peak reverse recovery time of 10 ns makes it ideal for high-speed switching applications.

This diode meets the stringent automotive standard AEC-Q101, ensuring suitability for automotive electronic systems. Its compact size includes a length of 55.9 mm, height of 3.9 mm, and diameter of 1.7 mm.

Metal-on-silicon Schottky barrier diode with PN junction guard ring. Low forward voltage drop of 600 mV. Maximum continuous forward current 200 mA. Peak reverse repetitive voltage 30 V. Peak forward surge current 15 A. Operating temperature range -55°C to 125°C.

Fast recovery time of 10 ns. Automotive standard AEC-Q101 certified. Compact DO-35 through hole package. Applications include MOS device protection, switching, biasing, and battery systems.

The SD103B-TR diode is widely used in industrial, automotive, and consumer electronic circuits for protection and fast switching. Its features enable effective full wave bridges, click suppression, and blocking in rechargeable low voltage battery systems.

Explore additional Vishay semiconductor components and Schottky diodes in the EnvMart catalog for reliable electronic design solutions.

Explore more products in our Schottky Diodes & Rectifiers category.

Vishay 30 V 200 mA Small Signal Diode Through Hole DO-35 SD103B-TR
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Frequently Asked Questions

The maximum continuous forward current for this diode is 200 mA.

It has a peak reverse repetitive voltage rating of 30 V.

The forward voltage drop is 600 mV, which contributes to its energy efficiency.

The operating temperature range is from -55°C to 125°C.

It can withstand a peak forward surge current of up to 15 A.

This model uses a DO-35 through hole package for reliable PCB integration.

The peak reverse current is limited to 5 μA, ensuring low leakage performance.

The peak reverse recovery time is 10 ns, making it suitable for high-speed switching applications.

Yes, it is compliant with the automotive standard AEC-Q101, ensuring its suitability for automotive applications.

The diameter of this diode is 1.7 mm.

The dimensions are 55.9 mm in length, 3.9 mm in height, and 1.7 mm in diameter.

It is suitable for applications such as MOS device protection, switching, biasing, and battery systems.

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