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DiodesZetex 600 mA NPN Transistor, 160 V, 3-Pin SOT-89 Surface Mount DXT5551-13
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.6mm |
| Length | 4.6mm |
| Model | DXT5551-13 |
| Width | 4.25mm |
| Mount Type | Surface |
| Series | DXT5551 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-89 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 160V |
| Minimum DC Current Gain hFE | 50 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 6V |
| Maximum Collector Base Voltage VCBO | 180V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 1.2W |
| Maximum DC Collector Current Idc | 600mA |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 300MHz |
Key Features
- Provides a maximum DC collector current of 600 mA.
- Features a maximum collector-emitter voltage of 160 V for robust operation.
- Mounted using a surface mount SOT-89 package for compact PCB designs.
- Maximum power dissipation of 1.2 W allows for moderate power applications.
- Designed with a transistor polarity of NPN suitable for switching and amplification.
- Supports a maximum transition frequency of 300 MHz enabling high-speed switching.
- Minimum DC current gain (hFE) of 50 ensures good amplification performance.
- Operating temperature range from -55°C to 150°C for industrial environment reliability.
Product Description
DiodesZetex DXT5551-13 is a general-purpose NPN bipolar transistor designed for use in electronic circuits requiring reliable switching and amplification up to 600 mA collector current.
This transistor features a maximum collector-emitter voltage of 160 V and a maximum collector base voltage of 180 V, making it suitable for medium-voltage applications. The device comes in a compact 3-pin SOT-89 surface mount package, enabling space-saving designs in compact electronic equipment and PCBs.
Operating temperature ranges from -55°C to 150°C, ensuring reliable performance in a variety of industrial and automotive environments. The transistor supports a maximum transition frequency of 300 MHz, allowing it to operate efficiently in high-frequency switching applications.
Power dissipation capability of 1.2 W supports moderate power applications without requiring extensive heat sinking. The minimum DC current gain of 50 guarantees sufficient signal amplification in typical circuits.
This transistor complies with Automotive Standard AEC-Q101, suitable for automotive electronics, and other industrial uses such as manufacturing, control systems, instrumentation, and power management.
Maximum DC collector current: 600 mA. Maximum collector-emitter voltage: 160 V. 3-Pin SOT-89 surface mount package. Maximum power dissipation: 1.2 W. NPN transistor polarity. Maximum transition frequency: 300 MHz. Minimum DC gain hFE: 50.
Operating temperature: -55°C to 150°C. Automotive standard: AEC-Q101 compliant. Compact dimensions (L x W x H): 4.6 mm x 4.25 mm x 1.6 mm. Suitable for industrial, automotive, telecommunications, and electronic manufacturing environments.
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Frequently Asked Questions
The maximum DC collector current for the DXT5551-13 is 600 mA.
It features a maximum collector-emitter voltage of 160 V.
This transistor comes in a 3-pin SOT-89 surface mount package.
The maximum power dissipation for this model is 1.2 W.
The operating temperature range is from -55°C to 150°C.
The minimum DC current gain (hFE) is 50, ensuring good amplification performance.
It supports a maximum transition frequency of 300 MHz, allowing for high-speed switching.
The DXT5551-13 complies with Automotive Standard AEC-Q101.
The dimensions are 4.6 mm in length, 4.25 mm in width, and 1.6 mm in height.
The maximum collector base voltage (VCBO) is 180 V.
This model has an NPN transistor polarity, suitable for switching and amplification.
It is suitable for applications in automotive electronics, manufacturing, control systems, instrumentation, and power management.
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