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DiodesZetex Small Signal PNP Transistor, 100 mA, 30 V, 3-Pin SOT-23 BC858B-7-F

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model BC858B-7-F
Width 2.5mm
Mount Type Surface
Series BC858B
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -30V
Minimum DC Current Gain hFE 220
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -30V
Automotive Standard AEC-Q101, AEC-Q200, AEC-Q100
Maximum Power Dissipation Pd 350mW
Maximum DC Collector Current Idc -100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Maximum DC collector current of 100 mA for moderate load handling.
  • Rated collector-emitter voltage up to 30 V suitable for low voltage circuits.
  • High transition frequency of 100 MHz for high-speed signal applications.
  • Maximum power dissipation of 350 mW allowing efficient thermal performance.
  • Compact dimensions with 3 mm length, 2.5 mm width, and 1.1 mm height.
  • Automotive standards AEC-Q101, AEC-Q200, and AEC-Q100 certified for reliability.
  • Operates within temperature range from -55°C to +150°C to support harsh environments.
  • Single transistor configuration with PNP polarity and surface mountable form factor.

Product Description

DiodesZetex BC858B-7-F small signal PNP transistor offers reliable performance for discrete semiconductor applications. It comes in a compact 3-pin SOT-23 package optimized for surface mounting on electronic circuit boards.

With a maximum DC collector current of 100 mA and a collector-emitter voltage rating of 30 V, this transistor is suitable for a wide range of low power amplification and switching tasks. Its high transition frequency of 100 MHz allows it to operate effectively in RF circuits and high-speed digital systems.

The transistor can dissipate up to 350 mW of power, ensuring stable thermal characteristics under typical operating conditions. It meets stringent automotive standards AEC-Q101, AEC-Q200, and AEC-Q100, confirming its quality and suitability for automotive and industrial environments.

Its operating temperature range from -55°C to 150°C enables use in demanding temperature environments, including industrial and automotive electronics. The single PNP transistor configuration supports common circuit designs requiring PNP polarity devices.

The package measures 3 mm long, 2.5 mm wide, and 1.1 mm high, making it ideal for compact and space-constrained PCB layouts. Its 3-pin design simplifies integration into various discrete transistor circuits.

Maximum DC collector current of 100 mA. Collector-emitter voltage rated at 30 V. High-frequency performance with 100 MHz transition frequency. Power dissipation capability of 350 mW. Automotive-certified to AEC-Q101, AEC-Q200, and AEC-Q100.

Operating temperature range from -55°C to 150°C. 3-pin SOT-23 surface mount package. Single PNP transistor configuration. Compact physical dimensions for PCB design. Typical DC current gain (hFE) of 220.

This transistor is widely used in industrial, automotive, and consumer electronic applications requiring reliable low power amplification and switching. It is ideal for designers seeking a trusted PNP transistor with verified automotive-grade reliability standards.

Explore more discrete semiconductor solutions and bipolar transistor components on EnvMart to meet your specific application needs.

Explore more products in our Bipolar Transistors category.

DiodesZetex Small Signal PNP Transistor, 100 mA, 30 V, 3-Pin SOT-23 BC858B-7-F
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Frequently Asked Questions

The maximum DC collector current for this model is 100 mA, making it suitable for moderate load handling.

This transistor has a collector-emitter voltage rating of up to 30 V, suitable for low voltage circuits.

The transition frequency of this model is 100 MHz, allowing it to operate effectively in high-speed signal applications.

It can dissipate up to 350 mW of power, ensuring stable thermal performance under typical operating conditions.

The package dimensions are 3 mm in length, 2.5 mm in width, and 1.1 mm in height, making it compact for PCB layouts.

This transistor operates within a temperature range from -55°C to 150°C, suitable for harsh environments.

It is certified to automotive standards AEC-Q101, AEC-Q200, and AEC-Q100, confirming its reliability for automotive applications.

This model features a single PNP transistor configuration, which is common in various circuit designs.

The minimum DC current gain (hFE) for this model is 220, which supports its amplification capabilities.

The maximum emitter-base voltage (VEBO) for this transistor is -5 V, which is important for its operational limits.

It is designed for surface mounting, making it suitable for integration into electronic circuit boards.

This transistor is widely used in industrial, automotive, and consumer electronic applications requiring low power amplification and switching.

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