DiodesZetex Isolated 2 Type N and Type P-Channel Power MOSFET, 3.4 A, 30 V Enhancement, 6-Pin TSOT DMG6602SVT-7

DiodesZetex model DMG6602SVT-7 is a high-performance isolated dual power MOSFET incorporating both N-channel and P-channel enhancement mode transistors designed for surface-mount applications. With a maximum continuous drain current of 3.4 amperes and a drain-source voltage rating of 30 volts, this device is suitable for efficient power management in compact electronics.

The transistor's low maximum drain-source resistance of 140 milliohms reduces conduction losses, enhancing overall efficiency. Its maximum gate-source voltage tolerance ranges from -20 volts to +20 volts, facilitating robust control in switching applications.

The compact TSOT package with a 6-pin configuration, measuring 2.9 mm in length, 1.6 mm in width, and 0.9 mm in height, enables high-density PCB layouts. It features typical gate charge values of approximately 4 nanocoulombs at rated gate voltage, enabling rapid switching capabilities critical for power saving and device reliability.

Designed and certified to operate safely between -55°C and +150°C, this dual MOSFET meets automotive industry standards including the AEC-Q101 compliance. It also adheres to international safety and environmental certifications such as RoHS compliance, J-STD-020, MIL-STD-202, and UL 94V-0 flammability standards, ensuring reliability and environmental responsibility.

The device is well suited for industrial, automotive, telecommunications, and consumer electronics power control applications where efficient, compact, and reliable MOSFETs are required.

The device features a low maximum drain-source resistance of 140 milliohms for efficient switching. It supports a maximum gate-source voltage range from -20 V to +20 V. The Power MOSFET is configured as isolated transistor with dual elements per chip.

Operates reliably within a wide temperature range from -55°C to +150°C. Designed with a compact 6-pin TSOT package dimensions of 2.9 mm length, 1.6 mm width, and 0.9 mm height. Typical gate charge of 4 nC at the specified gate voltage ensures fast switching performance.

Supports automotive standard AEC-Q101 and complies with multiple industry standards including RoHS, J-STD-020, MIL-STD-202, and UL 94V-0. Forward voltage drop is rated at 0.8 V for efficient conduction. Explore high-quality MOSFETs and discrete semiconductor components in the DiodesZetex range on EnvMart for your next electronics industrial or automotive project.