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DiodesZetex Isolated 2 Type P, Type N-Channel Power MOSFET 620mA 60V Enhancement 6-Pin SOT-563 DMG1029SV-7
Specifications
| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 0.6mm |
| Length | 1.7mm |
| Model | DMG1029SV-7 |
| Width | 1.25mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Package Type | SOT-563 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | J-STD-020, MIL-STD-202, AEC-Q101, RoHS, UL 94V-0 |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 620mA |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 6Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1W |
| Typical Gate Charge Qg @ Vgs | 0.3nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.4V |
| Transistor Configuration | Isolated |
Key Features
- This power MOSFET features isolated dual N/P channels for enhanced circuit design flexibility.
- The device supports a maximum continuous drain current of 620mA.
- Maximum drain-source voltage rating is 60 volts with a low drain-source resistance of 6 ohms.
- Compact surface-mount design with a 6-pin SOT-563 package ensures easy PCB integration.
- Operating temperature ranges from -55°C to +150°C for reliable performance under harsh conditions.
- Typical gate charge is 0.3 nanocoulombs at gate-source voltage, enabling efficient switching.
- Meets automotive AEC-Q101 standards and complies with RoHS.
- Suitable for electronic applications demanding low power dissipation up to 1 watt.
Product Description
DiodesZetex DMG1029SV-7 is an isolated dual type P and type N channel power MOSFET designed for high efficiency and reliable semiconductor switching applications. It has a compact 6-pin SOT-563 surface mount package with dimensions 1.7mm length, 1.25mm width, and 0.6mm height, suitable for space-constrained electronic devices.
This power MOSFET supports a maximum continuous drain current of 620mA and withstands drain-source voltages of up to 60 volts. Its enhancement mode operation and low maximum drain-source resistance of 6 ohms enable efficient power management.
The device has a maximum power dissipation of 1 watt and operates reliably across a wide temperature range from -55°C to +150°C, making it suitable for industrial, automotive, and general electronic applications requiring robust thermal handling.
Typical gate charge is only 0.3nC, and maximum gate-source voltage tolerances are -20 to +20 volts, making it suitable for precision gate control. It also features a forward voltage of 1.4 volts and isolated transistor configuration for enhanced circuit isolation.
The DMG1029SV-7 meets key industry standards such as J-STD-020, MIL-STD-202, AEC-Q101 automotive qualification, RoHS compliance, and UL 94V-0 flammability rating, ensuring quality and safety.
This power MOSFET is ideal for use in automotive electronics, industrial control circuits, power management systems, and other surface mount applications requiring dual N/P channel functionality in a compact package.
Isolated dual N/P channel Power MOSFET for versatile circuit applications. Supports maximum continuous drain current of 620mA at 60V. Enhancement mode with low drain-source resistance of 6Ω for efficiency. Surface mount 6-pin SOT-563 package for compact PCB integration.
Wide operating temperature range from -55°C to +150°C for industrial use. Meets automotive standard AEC-Q101 and RoHS compliance. Complies with J-STD-020 and MIL-STD-202 quality standards. Low typical gate charge of 0.3 nanocoulombs for rapid switching.
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Frequently Asked Questions
The maximum continuous drain current for this model is 620mA.
The maximum drain-source voltage rating is 60 volts.
The typical gate charge is 0.3 nanocoulombs at gate-source voltage.
It comes in a 6-pin SOT-563 surface mount package with dimensions of 1.7mm length, 1.25mm width, and 0.6mm height.
The operating temperature range is from -55°C to +150°C.
It complies with J-STD-020, MIL-STD-202, AEC-Q101 automotive qualification, RoHS, and has a UL 94V-0 flammability rating.
The maximum power dissipation is 1 watt.
This model features isolated dual N and P channel configurations.
The maximum drain-source resistance is 6 ohms.
The forward voltage is 1.4 volts.
The maximum gate-source voltage tolerance is between -20 to +20 volts.
It is suitable for automotive electronics, industrial control circuits, and power management systems requiring dual N/P channel functionality.
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