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Vishay 120 V 20 A Schottky Diode 3-Pin Through Hole TO-220AB V20120S-E3/4W
Specifications
| Country of Origin | China |
|---|---|
| Diameter | 10.54mm |
| Brand | Vishay |
| Height | 15.32mm |
| Length | 10.54mm |
| Model | V20120S-E3/4W |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | V20 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220AB |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Maximum Continuous Forward Current If | 20A |
| Peak Reverse Repetitive Voltage Vrrm | 120V |
| Diode Configuration | Single |
| Rectifier Type | Schottky |
| Peak Reverse Current Ir | 30mA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 200A |
| Maximum Forward Voltage Vf | 1.12V |
Key Features
- Features patented Trench MOS Barrier Schottky structure for lower forward voltage.
- Maximum continuous forward current of 20 A suitable for power applications.
- Peak reverse repetitive voltage is 120 V, ensuring robust reverse blocking.
- Supports peak non-repetitive forward surge current up to 200 A for transient conditions.
- Operates reliably between -40°C and 150°C temperature range.
- Compact dimensions with a TO-220AB through-hole package and 3 pins.
- Maximum forward voltage drop of only 1.12 V enhances efficiency.
- Low peak reverse current of 30 mA minimizes leakage losses.
Product Description
Vishay V20120S-E3/4W is a Schottky diode featuring a patented Trench MOS Barrier Schottky (TMBS) structure encapsulated in a TO-220AB through-hole package with 3 pins. This diode is designed for industrial and commercial applications requiring efficient rectification at a maximum continuous forward current of 20 A and a peak reverse repetitive voltage of 120 V.
The unique TMBS design reduces stored charge and minority carrier injection, thereby enhancing switching speed and lowering forward voltage drop to 1.12 V. Its robust construction supports a peak non-repetitive forward surge current up to 200 A, enabling resilience under transient surge conditions common in switching power supplies.
Operating reliably over a temperature range from -40°C to 150°C, this diode is ideal for industrial electronic power circuits, including AC/DC switched mode power supplies, DC/DC converters, and other power management applications. Its compact TO-220AB package measures 10.54 mm length, 4.7 mm width, and 15.32 mm height, providing easy mounting through a standard 3-pin configuration.
The Vishay V20120S-E3/4W diode minimizes reverse leakage current with a peak reverse current of only 30 mA, improving efficiency in critical systems. It does not carry any specific automotive certifications, and originates from China.
Patented Trench MOS Barrier Schottky structure reduces forward voltage. 20 A continuous forward current rating for high power applications. Schottky rectifier design for fast switching and low losses. Wide operating temperature range from -40°C to 150°C.
Peak surge current handling up to 200 A for transient tolerance. Compact TO-220AB 3-pin through-hole package for ease of use. Low peak reverse leakage current of 30 mA enhances efficiency. Suitable for use in industrial power supplies and converters.
This diode belongs to Vishay's semiconductor product line, known for reliability in discrete semiconductors. Explore more high-quality diodes and semiconductor components in the Electronics & Electricals category at EnvMart, your destination for industrial-grade electronic parts.
Explore more products in our Schottky Diodes & Rectifiers category.
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Frequently Asked Questions
The maximum continuous forward current of the Vishay V20120S-E3/4W Schottky diode is 20 A, making it suitable for high power applications.
This diode has a peak reverse repetitive voltage of 120 V, ensuring robust reverse blocking capabilities.
The Vishay V20120S-E3/4W operates reliably between -40°C and 150°C, allowing for use in various environments.
It comes in a TO-220AB package type with a 3-pin through-hole configuration, facilitating easy mounting.
The maximum forward voltage drop for this model is 1.12 V, which enhances its efficiency in power applications.
The peak reverse current for the Vishay V20120S-E3/4W is 30 mA, which helps minimize leakage losses.
This diode supports a peak non-repetitive forward surge current of up to 200 A, making it resilient under transient conditions.
The Vishay V20120S-E3/4W is ideal for industrial electronic power circuits, including AC/DC switched mode power supplies and DC/DC converters.
The dimensions of the TO-220AB package are 10.54 mm in length, 4.7 mm in width, and 15.32 mm in height.
This model is a Schottky rectifier, designed for fast switching and low losses in power management applications.
The Vishay V20120S-E3/4W is manufactured in China.
The diode configuration for the Vishay V20120S-E3/4W is single, which is common for many rectification applications.
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