$7.33
$7.11
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
onsemi N-Channel MOSFET 30 A 650 V Enhancement 3-Pin TO-247 NTHL110N65S3F
Specifications
| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 20.82mm |
| Length | 15.87mm |
| Model | NTHL110N65S3F |
| Width | 4.82mm |
| Mount Type | Through Hole |
| Series | NTHL |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 30A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 110mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 240W |
| Typical Gate Charge Qg @ Vgs | 58nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.3V |
Key Features
- The high voltage super-junction technology minimizes conduction loss effectively.
- Ultralow typical gate charge of 58 nC reduces switching energy losses.
- Low on-resistance of 110 mΩ supports efficient power dissipation up to 240 W.
- Operating temperature range extends from -55°C to 150°C for reliable applications.
- Robust body diode delivers excellent reverse recovery characteristics.
- Designed for through-hole mounting with a compact footprint of 20.82 mm height.
- Suitable for industrial, telecommunication, and power conversion systems.
- The MOSFET withstands gate-source voltage up to 30 V ensuring device protection.
Product Description
onsemi NTHL110N65S3F is a high-performance N-Channel MOSFET featuring advanced super-junction technology to ensure ultra-low conduction losses and superior switching capabilities. This 3-pin device packaged in a TO-247 offers a maximum continuous drain current of 30 A and a drain-source voltage rating of 650 V, making it ideal for demanding power applications.
The device supports power dissipation of up to 240 W, and operates reliably within a temperature range of -55°C to 150°C. Its low typical gate charge of 58 nC and a low drain-source on-resistance of 110 mΩ significantly enhance switching efficiency and reduce system losses.
The MOSFET employs an enhancement mode operation with excellent body diode performance characterized by low Qrr, making it suitable for applications with high dv/dt rates. Its robust design provides optimized capacitance and ensures higher system reliability especially at low temperature and in LLC and phase shift full bridge circuits.
Common applications include telecommunication equipment, cloud systems, industrial power supplies, EV chargers, and solar or UPS inverters, where reliability, efficiency, and thermal performance are critical.
Super-junction MOSFET technology for ultra-low resistance. Maximum drain current of 30 A with 650 V voltage rating. Low gate charge and output capacitance improve switching efficiency. Wide temperature range (-55°C to 150°C) for harsh environments.
Compact TO-247 through-hole package simplifies mounting. Excellent body diode for robust switching performance. Optimized for telecommunication and industrial power systems. High power dissipation ensures thermal reliability.
Explore more components in the Electronics & Electricals category at EnvMart for your semiconductor needs.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for the NTHL110N65S3F is 30 A.
This MOSFET has a drain-source voltage rating of 650 V.
The typical gate charge for this model is 58 nC.
The operating temperature range extends from -55°C to 150°C.
The on-resistance of this MOSFET is 110 mΩ.
This unit is designed for through-hole mounting.
The package type for this model is TO-247.
The maximum power dissipation for the NTHL110N65S3F is 240 W.
This MOSFET is suitable for applications in telecommunication equipment, industrial power supplies, EV chargers, and solar or UPS inverters.
The forward voltage of the body diode is 1.3 V.
This MOSFET has a pin count of 3.
This model uses an N-channel configuration.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$6.78
$6.57
-3%
New
$23.16
$20.22
-12.7%
Recently Viewed Products
$7.33
$7.11
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent